MT46V8M16TG-6T L:D TR

The MT46V8M16TG-6T L:D TR is a 128 Mbit DDR SDRAM device organized as 8M × 16 with four internal banks and a parallel memory interface. It implements an internal pipelined double-data-rate architecture with source‑synchronous data capture and differential clock inputs.

Designed for systems that require a compact, parallel DDR memory source, the device delivers programmable burst lengths, auto/self refresh modes, and timing options suitable for clock rates up to 167 MHz (speed grade -6T).

Key Features

• Core / Architecture Internal pipelined DDR architecture enabling two data accesses per clock cycle; supports bidirectional data strobe (DQS) and a DLL to align DQ/DQS with CK.
• Memory Organization 128 Mbit capacity organized as 8M × 16 with four internal banks (2M × 16 × 4 banks).
• Performance & Timing Clock frequency supported to 167 MHz (-6T speed grade) with an access time of 700 ps and a word/page write cycle time of 15 ns.
• Data I/O and Masking Source‑synchronous DQS transmitted/received with data; x16 devices include two DQS signals and two data mask (DM) signals (one per byte).
• Programmable Burst & Refresh Programmable burst lengths of 2, 4, or 8; supports auto refresh and self refresh modes (standard and optional low‑power self refresh).
• Voltage and I/O Supply range specified at 2.3 V to 2.7 V; 2.5 V I/O compatible with SSTL_2 signaling as noted in the device documentation.
• Clock & Command Differential clock inputs (CK/CK#) with commands entered on positive CK edges; DQS is edge‑aligned for READs and center‑aligned for WRITEs.
• Package & Mounting 66‑pin TSSOP (0.400", 10.16 mm width) package intended for surface mounting; longer lead TSOP option noted for improved reliability (OCPL).
• Operating Temperature Commercial temperature rating: 0°C to 70°C (TA).

Typical Applications

• Parallel memory subsystems — Provides 128 Mbit DDR memory in a 66‑TSSOP footprint for systems requiring parallel DDR SDRAM.
• Embedded board-level memory — Compact TSOP package and 8M × 16 organization suitable for board designs needing surface-mounted DDR memory.
• Systems requiring programmable burst transfers — Programmable burst lengths (2, 4, 8) and source‑synchronous DQS support burst-oriented data transfers.

Unique Advantages

• Source‑synchronous data capture: DQS transmitted/received with data and a DLL for alignment simplifies timing closure for READ and WRITE operations.
• Balanced performance at 167 MHz: Speed grade -6T documented for operation at 167 MHz, providing a defined timing envelope for system designers.
• Byte-level masking and dual DQS: x16 configuration includes two DM and two DQS signals (one per byte) for finer control over write masking and data strobes.
• Multiple refresh modes: Auto refresh and self refresh options support standard and low‑power refresh strategies as required by system power profiles.
• Compact TSOP footprint: 66‑TSSOP package (10.16 mm width) offers a small board footprint while noting longer lead TSOP option for improved reliability (OCPL).
• Commercial temperature rating: Specified for 0°C to 70°C operation for designs targeting commercial environments.

Why Choose MT46V8M16TG-6T L:D TR?

The MT46V8M16TG-6T L:D TR positions itself as a compact, parallel DDR SDRAM option that combines a 128 Mbit density, 8M × 16 organization, and documented timing for 167 MHz operation. Its DDR architecture, source‑synchronous DQS, programmable burst lengths, and refresh options make it suitable for systems that require predictable DDR behavior in a surface‑mount 66‑TSSOP package.

This device is well suited for designs needing a verified commercial‑temperature DDR memory component with byte-level masking and standard SSTL_2‑compatible I/O voltages. Technical details and timing options are provided in the manufacturer's product documentation to support integration and validation.

If you would like pricing, availability, or a formal quote for MT46V8M16TG-6T L:D TR, submit a request or contact sales to request a quote or further procurement information.