MT46V64M8TG-5B:D TR

The MT46V64M8TG-5B:D TR is a 512 Mbit parallel DDR SDRAM organized as 64M × 8 with a 66‑pin TSSOP package. It implements an internal, pipelined double-data-rate architecture with four internal banks and supports source‑synchronous data capture using bidirectional DQS.

Designed for designs that require parallel DDR memory with a 2.5 V I/O supply, this device provides programmable burst lengths, differential clock inputs, and timing grades up to a 200 MHz clock rate (speed grade -5B).

Key Features

• Core / Architecture  Internal pipelined DDR architecture that performs two data accesses per clock cycle and includes a DLL to align DQ and DQS with CK.
• Memory Organization  512 Mbit density arranged as 64M × 8 with four internal banks for concurrent operation.
• Performance / Timing  Speed grade -5B supports up to a 200 MHz clock (DDR400 timing example), with an access time listed as 700 ps and a write cycle time (word page) of 15 ns.
• Data I/O  Bidirectional data strobe (DQS) transmitted/received with data, data mask (DM) for write masking, and differential clock inputs (CK, CK#).
• Programmable Burst & Refresh  Programmable burst lengths of 2, 4, or 8 and support for auto refresh and self refresh options per device variant.
• Power & Voltage  VDD / VDDQ supply range centered at 2.5 V (specified 2.5 V ±0.2 V; DDR400 variant also listed at 2.6 V ±0.1 V), with 2.5 V I/O (SSTL_2 compatible).
• Package  66‑TSSOP (0.400", 10.16 mm width) plastic TSOP package option for board-level mounting.
• Temperature Range  Commercial operating temperature from 0 °C to +70 °C (TA) as specified for the device.

Typical Applications

• Parallel DDR memory subsystems  Acts as on-board parallel DDR SDRAM (64M × 8) where 512 Mbit density and DDR timing are required.
• Embedded systems  Provides DDR memory capacity and banked architecture for embedded designs requiring source‑synchronous data capture and programmable burst lengths.
• Legacy/board-level upgrades  Used in board designs that accept a 66‑pin TSOP footprint and require a 2.5 V DDR SDRAM interface.

Unique Advantages

• 512 Mbit density: Compact 64M × 8 organization delivers half‑gigabit capacity in a single TSOP device.
• Double‑data‑rate operation: Internal DDR pipeline and DQS support enable two data transfers per clock edge for improved throughput at a given clock rate.
• Flexible timing: Programmable burst lengths (2, 4, 8) and defined speed grades (including -5B at 200 MHz) allow designers to match throughput and latency to system needs.
• SSTL_2 compatible I/O: 2.5 V I/O (VDDQ) provides compatibility with standard SSTL_2 signaling levels.
• Board-level package choice: 66‑TSSOP package supports compact mounting and is specified with package dimensions for PCB integration.
• Banked operation and DQS alignment: Four internal banks plus DQS/DLL features support source‑synchronous capture and concurrent bank activity.

Why Choose MT46V64M8TG-5B:D TR?

The MT46V64M8TG-5B:D TR offers a specification-driven DDR SDRAM solution for designs needing 512 Mbit of parallel DDR memory in a 66‑pin TSOP package. Its double‑data‑rate architecture, DQS support, programmable burst lengths, and defined timing grades provide clearly measurable performance characteristics for system designers.

This device is suited to applications that require a compact, board‑mountable DDR memory component operating from a 2.5 V supply and within the specified commercial temperature range, offering design predictability and straightforward PCB integration.

Request a quote or submit an inquiry to receive pricing and availability information for the MT46V64M8TG-5B:D TR. Provide your quantity, required lead time, and any specific packaging or timing grade requirements to get a tailored response.