MT46V32M8TG-6T L:G TR

The MT46V32M8TG-6T L:G TR is a 256 Mbit DDR SDRAM single-die device organized as 32M × 8, delivered in a 66-pin TSSOP package. It implements a Double Data Rate (DDR) architecture with internal pipelined operation and source-synchronous data strobes.

Designed for implementations that require a parallel DDR memory interface, the device provides a mix of timing options, refresh and bank management, and a compact 66-TSSOP (0.400", 10.16 mm width) package for space-constrained board designs.

Key Features

• Core / DDR Architecture Internal pipelined Double-Data-Rate (DDR) architecture enabling two data accesses per clock cycle and DLL alignment of DQ/DQS with CK.
• Memory Organization 256 Mbit capacity arranged as 32M × 8 with four internal banks for concurrent operation.
• Timing & Performance Rated for a clock frequency up to 167 MHz (speed grade -6T). Typical access window and timing parameters include an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Data and Command Interface Differential clock inputs (CK/CK#), bidirectional data strobe (DQS) aligned with data for source-synchronous capture, and programmable burst lengths (BL = 2, 4, 8).
• Power & Voltage VDD/VDDQ operating ranges per datasheet options include +2.5 V ±0.2 V (DDR) and device supply range listed as 2.3 V to 2.7 V.
• Refresh & Reliability Auto-refresh support with 8K refresh cycles and self-refresh option noted in datasheet features.
• Package & Temperature 66-TSSOP (0.400", 10.16 mm width) plastic package. Commercial temperature rating of 0°C to +70°C (TA) is specified.

Typical Applications

• Parallel DDR memory subsystems — Use as a 256 Mbit DDR SDRAM device where a parallel DDR interface and 32M × 8 organization are required.
• Space-constrained board designs — Compact 66-TSSOP package suited to layouts requiring a small-footprint DRAM solution.
• Timing-sensitive data buffering — Source-synchronous DQS and DLL alignment support designs that need synchronized read/write timing.

Unique Advantages

• Double-data-rate operation: Two data accesses per clock cycle deliver increased data throughput relative to single-data-rate DRAM, enabled by DDR internal architecture and DQS signaling.
• Compact, standardized package: 66-TSSOP (0.400", 10.16 mm width) package provides a small PCB footprint while maintaining accessible pinout for parallel interfaces.
• Flexible timing support: Speed grade -6T supports operation at 167 MHz with programmable burst lengths and established CAS latency options in the datasheet.
• Robust refresh management: Auto-refresh and self-refresh capabilities with 8K refresh cycles reduce external refresh control complexity.
• SSTL_2-compatible I/O levels: VDD/VDDQ options at nominal 2.5 V support common DDR I/O voltage domains per the datasheet specifications.

Why Choose IC DRAM 256MBIT PAR 66TSOP?

The MT46V32M8TG-6T L:G TR provides a compact, parallel DDR SDRAM option with a 256 Mbit density and 32M × 8 organization, suitable for designs that require DDR timing, source-synchronous data capture, and a small-footprint 66-TSSOP package. Its documented timing options, internal bank architecture and refresh features make it appropriate for systems that require deterministic DDR behavior.

Manufactured by Micron Technology Inc., this device is positioned for engineers and procurement teams seeking a verifiable DDR memory component with defined electrical, timing and package specifications, and a commercial temperature rating for standard operating environments.

Request a quote or submit a pricing inquiry to obtain current availability and lead-time information for the MT46V32M8TG-6T L:G TR.