MT46V32M8TG-6T IT:G TR

The MT46V32M8TG-6T IT:G TR is a 256 Mbit DDR SDRAM device organized as 32M × 8 with a parallel memory interface. It implements a double-data-rate architecture with source-synchronous data strobe and internal DLL for high-speed data capture.

Designed for board-level memory subsystems, this device targets systems requiring compact TSOP mounting, industrial temperature operation, and standard DDR signaling with programmable burst lengths and on-chip refresh mechanisms.

Key Features

• Core / Architecture  Double-Data-Rate (DDR) SDRAM with internal pipelined DDR architecture enabling two data transfers per clock cycle; four internal banks support concurrent operation.
• Memory Organization & Capacity  256 Mbit total capacity, organized as 32M × 8 (8 Meg × 8 × 4 banks).
• Performance  Rated clock frequency up to 167 MHz (–6T timing grade); access time listed as 700 ps and write cycle time (word page) of 15 ns.
• Data Integrity & Timing  Source-synchronous DQS transmitted/received with data (edge-aligned for READs, center-aligned for WRITEs), DLL for DQ/DQS alignment, and support for data mask (DM).
• Programmable Burst & Refresh  Programmable burst lengths (BL = 2, 4, or 8) and auto-refresh support with an 8K refresh cycle (64 ms for commercial & industrial); self-refresh is supported (not available on AT devices).
• Interface & I/O  Parallel memory interface with differential clock inputs (CK, CK#) and 2.5 V I/O (SSTL_2-compatible).
• Power  VDD / VDDQ operating range 2.3 V to 2.7 V (typical 2.5 V ± tolerances indicated by timing grade).
• Package & Temperature  66-pin TSSOP (66‑TSOP) package, 0.400" (10.16 mm) width; industrial temperature grade –40 °C to +85 °C (TA).

Typical Applications

• Embedded memory subsystems  Use as board-level DDR memory for embedded processors and controllers requiring a compact TSOP footprint and parallel DDR interface.
• Industrial control and instrumentation  Industrial temperature rating (–40 °C to +85 °C) and on-chip refresh support make the device suitable for industrial electronics and instrumentation designs.
• Communications and networking equipment  DDR performance, source-synchronous DQS, and programmable burst lengths support packet buffering and transient data storage in networking modules.

Unique Advantages

• DDR performance at 167 MHz  Provides double-data-rate transfers with a rated clock frequency of 167 MHz (–6T), enabling higher throughput within a compact footprint.
• Industrial temperature range  Qualified for −40 °C to +85 °C operation, supporting designs that must operate reliably across extended temperature extremes.
• Compact 66‑TSSOP package  The 66-pin TSOP (0.400", 10.16 mm width) offers a space-efficient, through-board mounting option for dense PCB layouts.
• Flexible burst and refresh control  Programmable burst lengths (2/4/8) plus auto- and self-refresh mechanisms simplify memory management and support low-maintenance operation.
• SSTL_2-compatible I/O and differential clocking  2.5 V I/O signaling and differential CK/CK# inputs with DQS support ease integration into standard DDR signaling schemes.

Why Choose IC DRAM 256MBIT PAR 66TSOP?

The MT46V32M8TG-6T IT:G TR positions itself as a compact, industrial-temperature DDR SDRAM solution for designers needing 256 Mbit of parallel DDR memory in a 66‑TSSOP footprint. Its combination of DDR architecture, source-synchronous DQS, and programmable burst lengths delivers predictable timing behavior for embedded and networking memory subsystems.

This device is suited to customers implementing board-level DDR memory on space-constrained PCBs who require industrial temperature operation, standard 2.5 V I/O signaling, and built-in refresh mechanisms for robust, low-overhead memory management.

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