MT46V32M8P-6T:G TR

The MT46V32M8P-6T:G TR is a 256 Mbit DDR SDRAM organized as 32M × 8 with a parallel memory interface in a 66‑pin TSSOP package. It implements an internal pipelined Double-Data-Rate architecture with source-synchronous data capture and differential clock inputs, suited for board-level memory subsystems.

This device targets applications that require compact, commercial-temperature (0°C to 70°C) DDR memory with a 2.3 V–2.7 V supply window, supporting double transfers per clock and programmable burst lengths for flexible data throughput.

Key Features

• Core / Architecture Internal pipelined DDR architecture providing two data accesses per clock cycle and a DLL to align DQ/DQS transitions with CK.
• Memory Organization 256 Mbit capacity arranged as 32M × 8 with four internal banks for concurrent operation.
• Performance & Timing Clock support to 167 MHz (speed grade -6T), access time of 700 ps, and programmable burst lengths of 2, 4, or 8. Write cycle time (word page) is 15 ns.
• Data Interface & Signaling Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data, differential clock inputs (CK/CK#), and 2.5 V I/O (SSTL_2‑compatible).
• Power Operates from VDD = 2.3 V to 2.7 V (documented as 2.5 V ±0.2 V), with corresponding VDDQ options consistent with DDR signaling.
• Refresh & Self-Refresh Supports auto refresh (8K cycles) and self refresh (note: self refresh not available on AT device variants as documented).
• Package & Temperature 66‑pin TSSOP (0.400", 10.16 mm width) package; commercial operating ambient temperature range 0°C to 70°C.

Typical Applications

• Embedded memory subsystems — Use as on-board 256 Mbit DDR SDRAM where a 32M × 8 organization and parallel DDR interface are required.
• Board-level DDR memory — Suitable for systems requiring a 66‑pin TSSOP packaged DDR device with 2.3 V–2.7 V supply and up to 167 MHz clock operation.
• Commercial-temperature designs — Applicable for designs operating within the 0°C to 70°C ambient range.

Unique Advantages

• DDR throughput at 167 MHz (‑6T grade): Supports double-data-rate transfers at the documented 167 MHz clock rate for the -6T timing grade.
• Source-synchronous data capture (DQS): Bidirectional DQS transmitted/received with data simplifies timing alignment for read and write operations.
• Four internal banks and programmable bursts: Internal bank architecture plus BL = 2, 4, or 8 provides flexible burst behavior and concurrent operation.
• Standard SSTL_2-compatible I/O: 2.5 V I/O signaling for compatibility with typical DDR board interfaces.
• Compact 66‑TSSOP package: 66‑pin TSOP (0.400", 10.16 mm width) enables board-level integration where this package format is required.
• Commercial temperature rating: Rated for 0°C to 70°C ambient operation to match commercial-grade system requirements.

Why Choose MT46V32M8P-6T:G TR?

The MT46V32M8P-6T:G TR combines a 256 Mbit DDR SDRAM organization with source-synchronous DQS, differential clocking, and a 66‑pin TSSOP package to provide a compact, board-level DDR memory solution. Its documented timing grade and 2.3 V–2.7 V supply range suit designs that require defined DDR performance at commercial operating temperatures.

This device is appropriate for designers specifying a 32M × 8 DDR memory in a 66‑TSSOP form factor who need programmable burst length, four-bank concurrency, and standard SSTL_2‑compatible I/O. The documented feature set supports predictable integration and timing behavior for memory subsystems.

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