MT46V32M16TG-75E:C
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 419 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16TG-75E:C – IC DRAM 512Mbit Parallel 66-TSSOP
The MT46V32M16TG-75E:C is a 512 Mbit volatile DRAM organized as 32M × 16 and implemented using SDRAM - DDR architecture. It provides a parallel memory interface with a 133 MHz clock frequency and is offered in a 66-TSSOP (0.400", 10.16 mm width) package.
This device is intended for designs requiring mid-density, parallel-access SDRAM with defined timing and power characteristics, including a 2.3 V–2.7 V supply range and an ambient operating temperature of 0 °C to 70 °C.
Key Features
- Memory Architecture 32M × 16 organization yielding 512 Mbit total capacity in a parallel SDRAM - DDR configuration.
- Performance 133 MHz clock frequency with a specified access time of 750 ps and a write cycle time (word/page) of 15 ns, providing deterministic timing for parallel memory operations.
- Power Operates from a 2.3 V to 2.7 V supply range, compatible with 2.5 V system domains.
- Package 66-TSSOP package (0.400", 10.16 mm width) for compact board-level footprint and standard surface-mount assembly.
- Operating Range Specified for ambient temperatures from 0 °C to 70 °C (TA), suitable for commercial temperature environments.
- Interface Parallel memory interface suitable for systems using DDR SDRAM signaling.
Unique Advantages
- Predictable timing Documented access time (750 ps) and write cycle time (15 ns) enable accurate timing analysis during system design and validation.
- Standard 2.5 V support 2.3 V–2.7 V supply range aligns with common 2.5 V memory domains, simplifying power rail planning.
- Compact package 66-TSSOP footprint offers a balance between pin count and PCB area for space-constrained applications.
- Mid-density option 512 Mbit capacity (32M × 16) provides a mid-range memory size for systems requiring parallel DRAM without higher-density parts.
- Commercial temperature rating 0 °C–70 °C ambient rating supports a wide range of non-automotive, commercial deployments.
Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?
The MT46V32M16TG-75E:C positions itself as a straightforward, mid-density DDR SDRAM offering clearly specified electrical and timing parameters for parallel memory designs. Its 32M × 16 organization, 133 MHz clock frequency, and documented access/write timings make it suitable for systems that require deterministic memory behavior and standard 2.5 V supply compatibility.
This device is a fit for engineers and procurement teams designing commercial-temperature boards where a compact 66-TSSOP package and 512 Mbit capacity meet system memory requirements while simplifying power-rail and PCB footprint considerations.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT46V32M16TG-75E:C.
