MT46V32M16TG-75:C TR

The MT46V32M16TG-75:C TR from Micron Technology Inc. is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It is supplied in a 66-TSSOP package with a 0.400" (10.16 mm) width and targets systems that require volatile high-density memory with standard parallel access.

Key electrical characteristics include a 133 MHz clock frequency, a 750 ps access time, a write cycle time (word/page) of 15 ns, and a supply voltage range of 2.3 V to 2.7 V. The device is specified for operation from 0°C to 70°C (TA).

Key Features

• Memory Core and Architecture DDR SDRAM technology organized as 32M × 16 delivering 512 Mbit of volatile memory capacity in a parallel interface format.
• Performance 133 MHz clock frequency with a 750 ps access time and a 15 ns write cycle time (word/page) for deterministic memory access characteristics.
• Power Operates from a low-voltage supply range of 2.3 V to 2.7 V to match systems designed for reduced-voltage DDR operation.
• Package 66-TSSOP package (0.400", 10.16 mm width) suitable for surface-mount PCB designs where a standardized TSOP footprint is required.
• Environmental / Operating Range Rated for ambient operation between 0°C and 70°C (TA), suitable for standard commercial temperature environments.

Typical Applications

• Embedded systems with parallel memory interfaces — Provides volatile storage for processors and controllers that require a 16-bit parallel DDR memory device.
• Legacy and industrial equipment — Fits designs that specify a 66-TSSOP footprint and require a 512 Mbit DDR SDRAM at commercial temperature ranges.
• Memory expansion modules — Used where additional parallel DRAM capacity is needed within systems constrained to 2.3 V–2.7 V supply rails.

Unique Advantages

• 512 Mbit density: High-density memory in a single device enables compact board-level implementation of substantial volatile storage.
• 32M × 16 organization: A 16-bit wide data path supports parallel bus architectures and simplifies interface timing in 16-bit systems.
• Deterministic timing: Defined 133 MHz clock, 750 ps access time, and 15 ns write cycle time provide clear performance parameters for system timing design.
• Low-voltage operation: 2.3 V–2.7 V supply range supports designs that target reduced-voltage DDR operation and associated power profiles.
• Standard TSOP package: 66-TSSOP (0.400", 10.16 mm) package enables compatibility with established PCB footprints and automated assembly.
• Commercial temperature rating: Specified 0°C to 70°C operation for use in commercial-grade applications and environments.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16TG-75:C TR delivers a balanced combination of density, defined timing, and low-voltage DDR operation in a standardized 66-TSSOP package. Its 32M × 16 organization and 512 Mbit capacity make it suitable for designs that require parallel DDR memory with predictable access and write-cycle characteristics.

This device is appropriate for engineers and procurement teams designing commercial-temperature systems that need compact, surface-mount DRAM in a 16-bit parallel interface. Its clear electrical and mechanical specifications support straightforward integration and verification in board-level memory subsystems.

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