MT46V32M16TG-75 L:C TR

The MT46V32M16TG-75 L:C TR is a 512 Mbit volatile memory device implemented as SDRAM - DDR with a 32M × 16 organization and a parallel memory interface. It is supplied in a 66-TSSOP package (0.400", 10.16 mm width) and operates from a 2.3 V to 2.7 V supply.

Designed for board-level memory applications, the device delivers a 133 MHz clock frequency, 750 ps access time and a 15 ns write cycle time (word page), making it suitable for systems that require deterministic DDR SDRAM timing within a 0 °C to 70 °C ambient range.

Key Features

• Memory Core: 512 Mbit capacity organized as 32M × 16, providing a fixed-density parallel DDR memory element for system designers.
• Technology: SDRAM - DDR architecture supporting synchronous parallel access at defined DDR timings.
• Performance: 133 MHz clock frequency with 750 ps access time and a 15 ns write cycle time (word page) for predictable read/write timing.
• Power: Operates from a 2.3 V to 2.7 V supply range, enabling integration with low-voltage system rails.
• Package: 66-TSSOP (0.400", 10.16 mm width) supplier device package suitable for surface-mount PCB assembly.
• Operating Conditions: Specified for ambient operation from 0 °C to 70 °C (TA).

Typical Applications

• Board-level memory expansion — Provides 512 Mbit of parallel DDR SDRAM for systems requiring additional volatile storage with defined timing characteristics.
• Prototype and development boards — Used in designs that need a 32M × 16 DDR memory element for functional validation at 133 MHz clock rates.
• Module and subsystem integration — Suitable as a building block in memory subsystems where a 66-TSSOP packaged DDR device and 2.3 V–2.7 V supply are required.

Unique Advantages

• Fixed 512 Mbit density: Simplifies capacity planning with a 32M × 16 memory organization for consistent addressing and layout.
• DDR SDRAM timing: 133 MHz clock and 750 ps access time provide measured, synchronous performance for time-sensitive applications.
• Low-voltage operation: 2.3 V–2.7 V supply range supports integration with modern low-voltage system power rails.
• Compact surface-mount package: 66-TSSOP footprint (0.400", 10.16 mm width) enables PCB-mounted implementations without through-hole components.
• Defined write-cycle behavior: 15 ns write cycle time (word page) offers predictable write timing for controller design.
• Commercial temperature rating: Specified for 0 °C to 70 °C operation to match standard commercial applications.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16TG-75 L:C TR from Micron Technology Inc. is positioned as a straightforward, board-mount DDR SDRAM device offering a clear combination of capacity, timing, and package characteristics. Its 512 Mbit density, 32M × 16 organization, and defined electrical and timing specs make it suitable for designs that require predictable parallel DDR memory behavior.

This device is appropriate for engineers and procurement teams specifying a compact 66-TSSOP packaged DDR memory element operating at 2.3 V–2.7 V and 0 °C–70 °C. Its measurable timing parameters and manufacturer sourcing support integration into systems where deterministic memory timing and known package dimensions are required.

Request a quote or submit an RFQ for MT46V32M16TG-75 L:C TR to obtain pricing and availability details for your design or project.