MT46V32M16TG-6T:F TR

The MT46V32M16TG-6T:F TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It implements a double-data-rate architecture with source-synchronous data capture and is supplied in a 66-TSSOP (66-TSOP) package.

This device targets designs that require a 512 Mbit parallel DDR memory solution with 2.3 V–2.7 V supply ranges, a 167 MHz clock rate, and commercial temperature operation (0 °C to 70 °C).

Key Features

• Core architecture Internal, pipelined double-data-rate (DDR) architecture enabling two data accesses per clock cycle; differential clock inputs (CK/CK#) and DLL for timing alignment.
• Memory organization 512 Mbit capacity arranged as 32M × 16 with four internal banks (8 Meg × 16 × 4 banks configuration).
• Data and strobe Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 devices include two DQS signals (one per byte) and two data mask (DM) signals.
• Timing and performance Clock frequency listed at 167 MHz with an access time of 700 ps; speed grade -6T timing characteristics are provided for system timing design.
• Programmable burst and refresh Programmable burst lengths of 2, 4, or 8 and support for auto refresh (8K refresh cycles typical for commercial devices).
• Voltage and I/O VDD/VDDQ supply range 2.3 V to 2.7 V with 2.5 V I/O (SSTL_2 compatible as documented in the datasheet options).
• Package 66-TSSOP (0.400", 10.16 mm width) plastic TSOP option for board-level mounting.
• Operating temperature Commercial temperature rating: 0 °C to 70 °C (TA).

Typical Applications

• Parallel DDR memory expansion — For systems that require a 512 Mbit DDR SDRAM in a 32M × 16 organization with a parallel interface.
• Embedded system memory — Suitable where a commercial-temperature 512 Mbit DDR memory in 66-TSSOP is specified.
• Board-level replacements and upgrades — Use in designs that specify a 66-TSOP packaged 512 Mbit DDR component with 2.3 V–2.7 V supply requirements.

Unique Advantages

• Double-data-rate operation: Two data accesses per clock cycle provide higher effective data throughput compared to single-data-rate memories.
• Byte-wide strobe and masking (x16): Two DQS and two DM signals on x16 devices permit byte-level data capture and write masking for finer control of data transfers.
• Defined timing-grade (-6T): Speed-grade timing parameters including a 167 MHz clock option and specified data-out and access windows simplify system timing analysis.
• Standard 2.5 V I/O compatibility: VDD/VDDQ ranges of 2.3 V–2.7 V and documented 2.5 V I/O support SSTL_2-style interfacing as shown in the datasheet options.
• Compact 66-TSSOP package: Standard 66-pin TSOP form factor (10.16 mm width) for existing board layouts that require this package style.
• Commercial temperature rating: Specified operation from 0 °C to 70 °C for designs targeting commercial environments.

Why Choose MT46V32M16TG-6T:F TR?

The MT46V32M16TG-6T:F TR delivers a documented DDR SDRAM solution with a 512 Mbit capacity in a 32M × 16 organization, designed for systems requiring parallel DDR memory with 2.3 V–2.7 V supplies and commercial temperature operation. Its DDR architecture, byte-level DQS/DM support, and defined -6T timing parameters make it suitable for designs that need predictable timing and standard TSOP packaging.

This device is appropriate for engineers specifying a 66-TSSOP 512 Mbit DDR part and seeking clear datasheet timing, supply, and package information to support system integration and validation.

Request a quote or submit an inquiry for pricing and availability of the MT46V32M16TG-6T:F TR.