MT46V32M16TG-6T:C TR

The MT46V32M16TG-6T:C TR is a 512 Mbit parallel DRAM device implemented as DDR SDRAM with a 32M × 16 organization. It delivers DDR-style memory access in a compact 66-TSSOP (0.400", 10.16 mm width) package for board-level integration.

Designed for systems that require a mid-density parallel DRAM footprint, the device offers a 167 MHz clock frequency, 700 ps access time and a 15 ns write cycle time for word/page operations, operating across a 2.3 V–2.7 V supply range and a commercial temperature window of 0°C–70°C.

Key Features

• Memory Type & Technology  DDR SDRAM volatile memory providing synchronous dynamic RAM operation in a parallel interface format.
• Capacity & Organization  512 Mbit total memory organized as 32M × 16 bits, suitable for applications requiring mid-density DRAM.
• Performance  Supports a 167 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word/page), enabling predictable timing for system designs.
• Power  Operates from a 2.3 V to 2.7 V supply range, supporting lower-voltage system designs.
• Package  66-TSSOP (0.400", 10.16 mm width) surface-mount package (66-TSOP) for compact board-level implementation.
• Operating Range  Commercial temperature rating with an ambient operating range of 0°C to 70°C (TA).
• Interface  Parallel memory interface for direct integration into systems that use parallel DDR SDRAM connectivity.

Typical Applications

• Board-level parallel memory  Provides 512 Mbit of DDR SDRAM in a 66-TSSOP package for designers needing parallel memory density on printed circuit boards.
• Embedded system memory  Suitable for systems that require a 32M × 16 parallel DRAM organization with DDR timing characteristics.
• Buffer and working memory  Can be used where mid-density, parallel-access DRAM is required for buffering or temporary storage with defined timing (167 MHz clock, 700 ps access).

Unique Advantages

• 512 Mbit density in a compact package: Delivers mid-level memory capacity in a 66-TSSOP footprint to save PCB space while providing 32M × 16 organization.
• DDR SDRAM timing: 167 MHz clock and 700 ps access time offer defined synchronous performance for timing-sensitive designs.
• Defined write timing: 15 ns write cycle time (word/page) enables predictable write performance in system memory operations.
• Low-voltage operation: 2.3 V–2.7 V supply range supports lower-voltage system architectures and power-constrained designs.
• Commercial temperature suitability: Rated for 0°C–70°C ambient operation for standard commercial applications.

Why Choose MT46V32M16TG-6T:C TR?

The MT46V32M16TG-6T:C TR combines a 512 Mbit DDR SDRAM architecture with a compact 66-TSSOP package and clearly defined timing characteristics, making it a practical choice for designs that require mid-density parallel DRAM with predictable performance. Its 32M × 16 organization, 167 MHz clock support and 15 ns write cycle time simplify integration into systems that rely on parallel DDR memory.

This device is appropriate for engineers and procurement teams specifying board-level DRAM where package size, supply voltage range (2.3 V–2.7 V), and commercial temperature operation (0°C–70°C) are primary selection criteria. Its defined electrical and timing specs support consistent system behavior and straightforward BOM planning.

Request a quote or contact sales to discuss availability, pricing and lead times for the MT46V32M16TG-6T:C TR.