MT46V32M16TG-6T:F

The MT46V32M16TG-6T:F is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements an internal pipelined double-data-rate architecture with differential clock inputs and source-synchronous data strobes for high-throughput memory transfers.

This commercial‑temperature (0°C to +70°C) module is suited for DDR-based systems that require a 512 Mbit parallel DRAM in a 66‑TSOP footprint, offering standard DDR features such as programmable burst lengths, auto refresh, and byte-level masking.

Key Features

• Core Architecture Internal pipelined DDR architecture providing two data accesses per clock cycle and a DLL to align DQ/DQS transitions with CK.
• Memory Organization 512 Mbit capacity organized as 32M × 16 with four internal banks for concurrent operation.
• Interface and Timing Parallel DDR interface with differential clock inputs (CK/CK#), DQS source-synchronous strobes (x16 device has two DQS), programmable burst lengths of 2/4/8, and write cycle time (word/page) of 15 ns.
• Performance Rated clock frequency up to 167 MHz (speed grade 6T), with access time specified at 700 ps and documented data-out windows and skew tolerances in the datasheet.
• Power Supply range specified at 2.3 V to 2.7 V with 2.5 V I/O signaling characteristics documented in the datasheet.
• Package 66‑TSSOP (0.400", 10.16 mm width) package option; datasheet notes a longer‑lead TSOP option for improved reliability.
• Refresh and Reliability Auto refresh supported with 8K refresh cycles; self‑refresh options are defined in the datasheet.
• Operating Range Commercial temperature rating of 0°C to +70°C (TA) as specified in the product data.

Typical Applications

• DDR memory subsystems Used as 512 Mbit parallel DDR DRAM in systems designed for PC3200 / PC2700 / PC2100 speed grades as documented in the device timing compatibility tables.
• Embedded DDR platforms Provides x16 DDR memory capacity for embedded designs and legacy boards requiring a 66‑pin TSOP footprint.
• System upgrade and replacement Drop‑in replacement or redesign option where a 512 Mbit x16 DDR in 66‑TSSOP is required with documented timing and refresh behavior.

Unique Advantages

• Double‑data‑rate throughput: Internal DDR operation delivers two data transfers per clock cycle, increasing effective bandwidth without additional clock speed.
• Source‑synchronous data capture: DQS transmitted/received with data and DLL alignment of DQ/DQS to CK improve read/write timing margins documented in the datasheet.
• Byte‑level control: Data mask (DM) support and dual DQS on x16 devices enable per‑byte write masking and alignment.
• Flexible timing and burst options: Programmable burst lengths (2/4/8) and supported speed grades (including -6T at 167 MHz) allow tuning for system latency and throughput needs.
• Industry‑standard package: 66‑TSSOP package simplifies integration into existing board designs that require this form factor; longer‑lead TSOP option is available for improved reliability.
• Documented commercial operating range: Specified 0°C to +70°C temperature range and defined refresh/self‑refresh behavior for consistent system design.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16TG-6T:F provides a standardized 512 Mbit DDR SDRAM solution in a 66‑TSSOP package with documented timing, refresh, and electrical characteristics. Its DDR architecture, source‑synchronous DQS signals, and x16 organization make it suitable for designs that require predictable parallel DDR performance at a commercial temperature range.

This device is appropriate for engineers specifying a 512 Mbit DDR component in established TSOP footprints who need clear timing grades, programmable burst options, and standard supply operating windows to match system requirements.

For pricing, availability, or to request a formal quote for MT46V32M16TG-6T:F, submit a request specifying required quantity, shipping terms, and target lead times.