MT46V32M16TG-6T IT:F TR

The MT46V32M16TG-6T IT:F TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements a double-data-rate architecture with source‑synchronous DQS and a DLL, delivering two data transfers per clock cycle for higher effective throughput.

Designed for applications requiring a compact parallel DDR memory device with industrial temperature operation (‑40°C to +85°C) and 2.5 V I/O compatibility, this device targets systems that need predictable timing (167 MHz clock rate, 700 ps access window) and standard DDR features such as programmable burst lengths and auto‑refresh.

Key Features

• Core / Architecture Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture and four internal banks for concurrent operation.
• Memory Organization & Density 512 Mbit total capacity, organized as 32M × 16 (8 Meg × 16 × 4 banks).
• Interface & Timing Parallel DDR interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) transmitted/received with data, programmable burst lengths of 2, 4 or 8, and a write cycle time (word page) of 15 ns.
• Performance Supports a clock frequency of 167 MHz (speed grade 6T), with a specified data‑out window and a 700 ps access time.
• Voltage & I/O 2.3 V to 2.7 V supply range (VDD/VDDQ), with 2.5 V I/O compatibility (SSTL_2 compatible as specified in the datasheet).
• Refresh & Low‑level Functionality Auto refresh and self refresh options; 8192 refresh cycles supported in standard configurations.
• Package 66‑pin TSSOP (0.400" / 10.16 mm width) in a longer‑lead TSOP option for improved reliability.
• Temperature Range Industrial operating temperature: −40°C to +85°C (TA).

Typical Applications

• Parallel DDR memory subsystems Use as a 512 Mbit parallel DDR SDRAM device where a 32M × 16 organization and standard DDR signaling are required.
• Industrial temperature systems Appropriate for designs that require operation across −40°C to +85°C ambient conditions.
• High‑throughput buffering Suitable for data buffering and temporary storage where double‑data‑rate transfers and programmable burst lengths improve effective bandwidth.

Unique Advantages

• Industrial temperature rating: Specified operation from −40°C to +85°C for deployment in temperature‑sensitive applications.
• Proven DDR feature set: Includes DLL, DQS source‑synchronous capture, differential clocks, and programmable burst lengths for conventional DDR system integration.
• Compact TSOP packaging: 66‑TSSOP (10.16 mm width) offers a small footprint with longer leads option for improved reliability in board assembly.
• SSTL_2 compatible I/O: Operates at 2.3 V–2.7 V with 2.5 V I/O compatibility, aligning with common DDR signaling standards specified in the datasheet.
• Concurrent bank operation: Four internal banks enable overlapping commands and improved access flexibility within the device.

Why Choose MT46V32M16TG-6T IT:F TR?

The MT46V32M16TG-6T IT:F TR provides a standards‑based 512 Mbit DDR SDRAM solution with a 32M × 16 organization, source‑synchronous DQS, and differential clocking for predictable timing and effective throughput at a 167 MHz clock rate. Its industrial temperature rating and 66‑TSSOP packaging make it a practical choice where space, thermal range, and conventional DDR signaling are key design constraints.

This Micron‑manufactured device is appropriate for designs that need a compact parallel DDR memory element with standard DDR features (DLL, auto refresh, programmable burst lengths) and clearly defined electrical and timing characteristics for straightforward integration and evaluation.

Request a quote or submit an RFQ to obtain pricing, lead‑time and availability information for MT46V32M16TG-6T IT:F TR to support your design evaluation and procurement process.