MT46V32M16TG-5B:J
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 717 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16TG-5B:J – IC DRAM 512Mbit Parallel 66-TSSOP
The MT46V32M16TG-5B:J is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It is supplied in a 66-TSSOP package and is manufactured by Micron Technology Inc.
Designed for systems requiring a parallel DDR memory device operating at up to 200 MHz, the device provides defined timing characteristics and operating conditions including a 2.5 V to 2.7 V supply range and a 0°C to 70°C ambient temperature rating.
Key Features
- Memory Core Volatile DRAM organized as 32M × 16 for a total density of 512 Mbit; technology specified as SDRAM - DDR.
- Interface Parallel memory interface suitable for parallel DDR implementations.
- Performance Clock frequency 200 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns as specified.
- Power Operates from 2.5 V to 2.7 V supply voltage.
- Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for compact PCB footprint.
- Operating Range Rated for ambient temperatures from 0°C to 70°C (TA).
Unique Advantages
- Parallel DDR architecture: Provides a straightforward fit for designs requiring a parallel DDR SDRAM device.
- Mid-range density in a compact package: 512 Mbit capacity with 32M × 16 organization in a 66-TSSOP package supports space-constrained board designs.
- Defined timing performance: 200 MHz clock frequency, 700 ps access time and 15 ns write cycle time give clear timing targets for system integration.
- Standard low-voltage operation: 2.5 V–2.7 V supply range aligns with common DDR power domains.
- Ambient operating specification: Rated for 0°C to 70°C, allowing selection based on the target thermal environment.
- Manufacturer identification: Offered by Micron Technology Inc., identifying the device source and part numbering.
Why Choose MT46V32M16TG-5B:J?
The MT46V32M16TG-5B:J positions itself as a 512 Mbit parallel DDR SDRAM option that combines defined timing (200 MHz clock, 700 ps access) with a compact 66-TSSOP package and standard DDR voltage range. Its specification set supports integration into designs that require a mid-density, parallel-interface DRAM with clear electrical and thermal parameters.
This part is appropriate for projects that need a Micron-manufactured DDR memory device with the shown organization, timing, package and operating range, providing predictable behavior for system memory design and layout considerations.
Request a quote or submit an inquiry to receive pricing and availability for the MT46V32M16TG-5B:J.
