MT46V32M16P-75 L:C TR

The MT46V32M16P-75 L:C TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It provides volatile high-speed memory in a 66-TSSOP package suitable for board-level integration where a compact, parallel DDR memory is required.

Key characteristics include a 133 MHz clock frequency, 750 ps access time, 15 ns write cycle time (word page), and a 2.3 V–2.7 V supply range, making it applicable to designs that need moderate-density volatile storage with defined timing and voltage requirements within a 0°C to 70°C operating range.

Key Features

• Memory Core DDR SDRAM technology with 512 Mbit capacity organized as 32M × 16 for parallel data paths.
• Performance 133 MHz clock frequency, 750 ps access time, and 15 ns write cycle time (word page) for deterministic timing considerations.
• Power Operates from a 2.3 V to 2.7 V supply range, supporting lower-voltage system rails.
• Interface Parallel DRAM memory interface suitable for conventional parallel DDR controller architectures.
• Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for compact PCB footprint and standard board assembly.
• Environmental/Operating Range Specified operating ambient temperature range of 0°C to 70°C (TA).
• Memory Format & Mounting Volatile DRAM format intended for applications requiring temporary data storage.

Typical Applications

• Embedded systems — Provides 512 Mbit parallel DDR SDRAM capacity for embedded designs that require moderate-density volatile memory.
• Consumer electronics — Suited for devices that need board-level DDR memory in a compact 66-TSSOP package within the specified temperature and voltage ranges.
• Memory subsystems — Can be used in memory expansion or module designs where a 32M × 16 organization and parallel interface are required.

Unique Advantages

• Density-performance balance: 512 Mbit capacity with 32M × 16 organization and 133 MHz clock provides a balanced footprint of capacity and timing for mid-density DDR needs.
• Deterministic timing parameters: 750 ps access time and 15 ns write cycle time (word page) enable predictable timing analysis during system design.
• Low-voltage operation: 2.3 V–2.7 V supply range supports integration into lower-voltage power architectures.
• Compact package: 66-TSSOP (0.400", 10.16 mm width) offers a standard, space-efficient option for PCB layout and assembly.
• Parallel interface compatibility: Parallel DRAM interface and 32M × 16 organization align with conventional DDR controller implementations.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16P-75 L:C TR is positioned for designs requiring a 512 Mbit DDR SDRAM device that combines defined timing, a compact 66-TSSOP package, and low-voltage operation. Its 133 MHz clock, 750 ps access time, and 15 ns write cycle time provide clear electrical parameters for system timing and integration.

This device is suitable for engineers and procurement teams specifying mid-density volatile memory for embedded systems, consumer products, or memory subsystems where a parallel DDR interface and a 0°C to 70°C operating range meet the design requirements. Manufactured by Micron Technology Inc., it provides a clear set of specifications for predictable integration into production designs.

Request a quote or submit a pricing inquiry for the MT46V32M16P-75 L:C TR to receive availability and ordering information.