MT46V32M16P-75 L:C

The MT46V32M16P-75 L:C is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It provides DDR SDRAM architecture with a 133 MHz clock frequency intended for systems that require volatile high-density memory in a compact 66-TSSOP package.

Designed for engineers specifying a 512 Mbit parallel DRAM solution, the device offers defined timing characteristics, a low-voltage supply range, and a commercial operating temperature range for integration into board-level designs.

Key Features

• Core / Memory Architecture DDR SDRAM technology organized as 32M × 16, providing a total memory size of 512 Mbit in a parallel DRAM format.
• Performance 133 MHz clock frequency with an access time of 750 ps and a write cycle time (word page) of 15 ns, enabling defined read/write timing behavior.
• Power Operates from a 2.3 V to 2.7 V supply range as specified for the device.
• Package Supplied in a 66-TSSOP package (0.400" / 10.16 mm width), suitable for compact board-level mounting.
• Environmental / Temperature Rated for operation over a commercial temperature range of 0°C to 70°C (TA).

Unique Advantages

• High-density memory in a small footprint: 512 Mbit capacity (32M × 16) in a 66-TSSOP package conserves PCB area while delivering significant DRAM capacity.
• DDR performance characteristics: 133 MHz clocking with 750 ps access time and 15 ns write cycle time provides predictable timing for system memory designs.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports low-voltage system architectures.
• Parallel interface: Standard parallel DRAM interface and 16-bit organization simplify integration with parallel memory controllers.
• Commercial temperature rating: Specified for 0°C to 70°C operation for general-purpose electronic applications.

Why Choose MT46V32M16P-75 L:C?

The MT46V32M16P-75 L:C positions itself as a compact, mid-density DDR SDRAM option for designs requiring 512 Mbit of parallel DRAM in a 66-TSSOP package. Its specified timing figures (133 MHz clock, 750 ps access time, 15 ns write cycle) and low-voltage supply range make it suitable for board-level systems where defined DDR performance and a small package are needed.

This device is suited to designers and procurement teams specifying a volatile DDR memory component with clear electrical and thermal operating limits, enabling straightforward evaluation against system-level timing and power budgets.

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