MT46V32M16P-6T:F

The MT46V32M16P-6T:F is a 512 Mbit Double Data Rate (DDR) SDRAM organized as 32M × 16 with a parallel memory interface. It implements an internal, pipelined DDR architecture with source-synchronous data strobes and a DLL for aligned data capture, delivering two data transfers per clock cycle.

Designed for commercial-temperature systems, this device targets applications requiring mid-density, high-bandwidth volatile memory in a 66-pin TSSOP package, offering a balance of density, timing performance and a compact footprint.

Key Features

• Core DDR Architecture Internal pipelined DDR design provides two data accesses per clock cycle and includes a DLL to align DQ/DQS transitions with CK for reliable source-synchronous operation.
• Memory Organization & Capacity 512 Mbit capacity arranged as 32M × 16 with four internal banks to support concurrent operations and programmable burst lengths of 2, 4 or 8.
• Performance & Timing Specified for a clock frequency up to 167 MHz (speed grade 6T) with an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Data I/O and Signaling Bidirectional data strobe (DQS) transmitted/received with data; x16 configuration provides two DQS lines (one per byte) and two data mask (DM) signals for byte-level write masking. Differential clock inputs (CK/CK#) are supported.
• Power Operates from a 2.3 V to 2.7 V supply range (datasheet nominal VDD/VDDQ ≈ 2.5 V ± tolerance), with 2.5 V I/O signaling compatibility noted in datasheet features.
• Package and Mechanical 66-pin TSSOP (66-TSSOP / 66-TSOP) package with 0.400" (10.16 mm) width; the longer-lead TSOP option is noted for improved reliability.
• Temperature Rating Commercial operating temperature range of 0°C to +70°C (TA).
• Refresh and Reliability Supports auto refresh and standard 8K refresh cycles; features such as concurrent auto precharge and tRAS lockout are supported per datasheet.

Typical Applications

• Commercial computing and consumer electronics — Mid-density DDR memory for systems requiring parallel SDRAM for program or data buffering within the 0°C to +70°C commercial range.
• Embedded systems — On-board volatile storage for embedded controllers and modules that need a compact 66-TSSOP footprint with DDR throughput.
• Networking and communications equipment — Buffering and transient data storage where parallel DDR SDRAM with programmable burst lengths and multiple banks improves throughput.

Unique Advantages

• 512 Mbit density in a compact TSOP — High memory capacity in a 66-TSSOP package enables denser system designs without moving to larger package types.
• DDR source-synchronous data transfer — DQS-based capture with DLL alignment and differential clock inputs supports reliable, high-rate data transfers at the specified clock frequency.
• Byte-level control for writes — x16 device provides two data mask (DM) signals enabling selective byte masking during write operations.
• Flexible burst and bank architecture — Programmable burst lengths (2/4/8) and four internal banks enable efficient access patterns for varied workloads.
• Commercial-temperature qualification — Rated for 0°C to +70°C operation to match a wide range of commercial electronic applications.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16P-6T:F provides a straightforward DDR SDRAM solution for designs needing 512 Mbit of volatile memory with parallel interface timing and source-synchronous data capture. Its combination of 32M × 16 organization, 167 MHz clock capability (speed grade 6T), and 66-TSSOP package make it suitable for compact commercial systems that require reliable DDR performance.

Engineers building mid-density memory subsystems will find this device appropriate where commercial temperature operation, byte-level write masking, programmable burst lengths and differential clocking are required. The device's documented timing and refresh behaviors support predictable integration into existing DDR memory controllers and board-level designs.

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