MT46V32M16P-6T L:F

The MT46V32M16P-6T L:F is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It implements a double-data-rate architecture with internal pipelining and source-synchronous data capture to deliver two data accesses per clock cycle.

This device is intended for designs requiring 512 Mbit of volatile DDR memory in a compact 66‑TSSOP package, offering a 167 MHz clock capability, 700 ps access time, and commercial temperature operation (0°C to 70°C).

Key Features

• DDR SDRAM architecture Internal, pipelined double-data-rate operation provides two data accesses per clock cycle and supports DLL alignment of DQ/DQS with CK.
• Memory organization 32M × 16 organization delivering 512 Mbit total capacity with four internal banks for concurrent operation.
• Source-synchronous data strobes Bidirectional DQS transmitted/received with data; x16 devices include two DQS signals (one per byte) for source-synchronous capture.
• Programmable burst and masking Programmable burst lengths of 2, 4, or 8 and data mask (DM) support (x16 has two DM signals, one per byte) for flexible data transfers.
• Clock and timing Differential clock inputs (CK/CK#), commands on positive CK edge, and timing characteristics targeting a 167 MHz clock frequency and 700 ps access time.
• Power Operates from a 2.3 V to 2.7 V supply range as specified for VDD/VDDQ.
• Refresh and reliability options Supports auto refresh (8192-cycle refresh) and optional concurrent auto precharge; self-refresh options available per device revision.
• Package 66‑TSSOP (0.400", 10.16 mm width) plastic package suitable for board-level mounting where a slender TSOP footprint is required.
• Temperature rating Commercial operating temperature range of 0°C to +70°C (TA).

Typical Applications

• Embedded memory subsystems — Provide 512 Mbit parallel DDR storage for systems that require a 32M × 16 memory organization and source-synchronous operation.
• High-bandwidth data buffering — Use where double-data-rate transfers and programmable burst lengths enable burst-oriented buffering and data staging.
• Compact board-level memory — Deploy in designs that require a low-profile 66‑TSSOP footprint with standard DDR signaling and timing.

Unique Advantages

• Parallel DDR with source-synchronous DQS DQS transmitted/received with data and two DQS lines for x16 devices enable reliable byte-wise capture and simplified timing alignment.
• Flexible transfer control Programmable burst lengths (2, 4, 8) and data mask signals allow designers to tailor transfers for system bandwidth and masking needs.
• Robust timing support DLL alignment, differential clock inputs, and defined timing windows support deterministic timing at the specified clock rate.
• Commercial grade temperature and supply Operates across 0°C to +70°C with a 2.3 V–2.7 V supply range, matching common commercial system requirements.
• Compact TSOP package 66‑TSSOP (0.400" / 10.16 mm) provides a narrow footprint option for space-constrained PCBs.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16P-6T L:F delivers a straightforward 512 Mbit DDR SDRAM option with a parallel x16 interface, source-synchronous DQS, and programmable burst control—features that support predictable, high-throughput data transfers in commercial temperature environments. Its 66‑TSSOP package and 2.3 V–2.7 V supply range make it suitable for compact, board-level memory expansions where standard DDR timing and signaling are required.

This device is suited to engineers designing systems that need an explicitly specified 32M × 16 DDR memory element with defined timing characteristics, refresh behavior, and packaging. The documented electrical and timing parameters support integration and long-term design planning with vendor-provided datasheet guidance.

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