MT46V32M16P-5B:F TR

IC DRAM 512MBIT PARALLEL 66TSOP
Part Description

IC DRAM 512MBIT PARALLEL 66TSOP

Quantity 179 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16P-5B:F TR – IC DRAM 512MBIT PARALLEL 66TSOP

The MT46V32M16P-5B:F TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 66-pin TSSOP package. It implements a double-data-rate architecture with source-synchronous DQS signaling and an internal DLL to enable two data transfers per clock cycle.

This device is suited for systems and modules that require a 512 Mbit parallel DDR memory solution with 2.5V I/O, programmable burst lengths, and commercial-temperature operation. Key value propositions include DDR data throughput at a 200 MHz clock rate, compact 66-TSSOP packaging, and industry-standard SSTL_2-compatible I/O levels.

Key Features

  • Core architecture Internal pipelined DDR architecture with two data accesses per clock cycle and an on-chip DLL for DQ/DQS alignment.
  • Memory organization 512 Mbit capacity organized as 32M × 16 with four internal banks for concurrent operation.
  • Performance & timing Rated for a 200 MHz clock frequency (speed grade -5B), access window 700 ps, and programmable burst lengths of 2, 4, or 8.
  • Data capture and masking Bidirectional data strobe (DQS) transmitted/received with data; x16 device includes two DQS signals and two data mask (DM) inputs—one per byte.
  • Interface & clocking Parallel memory interface with differential clock inputs (CK/CK#) and commands entered on each positive CK edge.
  • Refresh and self-refresh Auto refresh with 8K refresh cycles (64 ms, 8192 cycles for commercial devices); self-refresh option noted in datasheet where applicable.
  • Power & I/O Operating VDD/VDDQ reported in the datasheet at nominal 2.5 V (spec range 2.5 V – 2.7 V); 2.5 V I/O compatible with SSTL_2 signaling.
  • Package & temperature 66-pin TSSOP (0.400", 10.16 mm width) package; commercial operating temperature 0 °C to +70 °C (TA).
  • Write timing Write cycle time (word page) specified at 15 ns.

Typical Applications

  • Parallel DDR memory subsystems — Provides 512 Mbit, x16 parallel DDR storage for systems that require compact TSSOP packaging and SSTL_2 I/O.
  • High-bandwidth buffering — Used as DRAM buffer memory where double-data-rate transfers and programmable burst lengths improve throughput.
  • Embedded module memory — Suited for embedded designs needing a 32M × 16 memory organization in a 66-pin footprint and commercial temperature range.

Unique Advantages

  • DDR data throughput: The double-data-rate architecture delivers two data transfers per clock cycle, enabling higher effective bandwidth at a given clock frequency.
  • Compact TSOP packaging: The 66-TSSOP package (10.16 mm width) provides a space-efficient form factor for board-level integration.
  • Source-synchronous capture: Bidirectional DQS and an internal DLL support reliable data capture and alignment with the clock.
  • SSTL_2-compatible I/O: 2.5 V I/O levels align with common SSTL_2 signaling standards for memory interfaces.
  • Programmable bursts and multi-bank operation: Burst length options (2, 4, 8) and four internal banks allow flexible data transfer patterns and concurrent operations.
  • Commercial-grade operating range: Specified for 0 °C to +70 °C (TA) to match commercial temperature environments.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16P-5B:F TR offers a compact, 512 Mbit DDR SDRAM solution with a x16 parallel interface, designed for applications that require DDR performance in a 66-pin TSSOP package. With a 200 MHz clock rating (DDR transfers), programmable burst lengths, and on-chip features such as DLL and bidirectional DQS, it provides predictable timing behavior and interface compatibility with 2.5 V SSTL_2 I/O environments.

This device is well suited to designers and procurement teams specifying parallel DDR memory for commercial-temperature systems where device density, package footprint, and standardized I/O signaling are primary considerations. The combination of timing specifications, refresh behavior, and package options supports straightforward integration into existing parallel DDR memory architectures.

If you would like pricing or availability information, please request a quote or submit a parts inquiry for MT46V32M16P-5B:F TR.

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