MT46V32M16P-5B XIT:J TR

The MT46V32M16P-5B XIT:J TR is a 512Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements an internal, pipelined double-data-rate architecture with four internal banks and source-synchronous data capture for high-throughput read/write operations.

Designed for board-level DDR memory applications, this device supports up to 200 MHz clock operation (speed grade -5B), 2.5 V supply operation, and an industrial operating temperature range of -40°C to +85°C, providing a compact memory option for systems requiring parallel DDR memory in a 66‑pin TSOP footprint.

Key Features

• Core architecture Internal pipelined DDR architecture with four internal banks for concurrent operation; commands entered on positive CK edge and DLL to align DQ/DQS with CK.
• Memory organization & capacity 512 Mbit capacity arranged as 32M × 16 with two data strobes (DQS) for x16 (one per byte) and data mask (DM) signals for byte masking.
• Timing & performance Speed grade -5B supports 5 ns cycle time (CL = 3) with up to 200 MHz clock rate; listed access time of 700 ps and write cycle time (word page) of 15 ns.
• Interface & signals Parallel DDR interface with differential clock inputs (CK, CK#), bidirectional DQS transmitted/received with data, and programmable burst lengths of 2, 4, or 8.
• Power & I/O VDD/VDDQ nominal +2.5 V (±0.2 V); DDR400 variant options listed at VDD = +2.6 V (±0.1 V). I/O compatible with 2.5 V signaling.
• Refresh & maintenance Auto refresh supported; 8K refresh-cycle count specified. Self-refresh is documented (with availability notes for certain options).
• Package & temperature 66‑TSSOP package (0.400", 10.16 mm width) for board-level integration; operating temperature range −40°C to +85°C (TA).

Typical Applications

• Board-level DDR memory subsystems Compact 66‑TSSOP footprint and parallel DDR interface make it suitable for adding 512 Mbit of DDR memory on PCBs where a small TSOP package is required.
• Industrial control equipment Industrial operating temperature range (−40°C to +85°C) supports use in control and automation systems that require robust memory across wide temperatures.
• Embedded systems with parallel DDR interfaces Source‑synchronous DQS and programmable burst lengths enable integration into embedded designs that use parallel DDR SDRAM timing and signaling.
• Legacy or specialized DDR designs Speed grade and timing compatibility options support systems designed to DDR timing grades documented in the product family data.

Unique Advantages

• High-speed DDR operation (speed grade -5B) Supports 5 ns cycle time (CL = 3) and up to 200 MHz clock rate for designs requiring higher DDR throughput.
• Byte-level data strobes and masking for x16 Two DQS signals and data mask lines provide byte-oriented control for read/write data alignment and masking.
• Compact TSOP packaging 66‑TSSOP (10.16 mm width) allows dense PCB routing and a smaller board footprint compared with larger packages.
• Industrial temperature capability Rated −40°C to +85°C (TA), enabling use in temperature-demanding environments.
• Flexible timing and refresh options Programmable burst lengths (2/4/8) and documented auto-refresh/self‑refresh behaviors provide design flexibility for diverse memory management strategies.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16P-5B XIT:J TR is positioned as a compact, industrial-temperature DDR SDRAM device within Micron's 512Mb DDR SDRAM family, offering a 32M × 16 organization, source-synchronous DQS, and support for 200 MHz operation at the -5B timing grade. Its combination of DDR performance, 2.5 V I/O operation, and 66‑pin TSOP packaging makes it suitable for engineers implementing parallel DDR memory on space-constrained PCBs.

This part is appropriate for designs that require documented DDR timing behavior, byte-level strobes and masking, and an industrial operating range. Its feature set supports scalability in memory subsystem designs while aligning with the DDR SDRAM characteristics provided in the product datasheet.

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