MT46V32M16P-5B IT:F TR

The MT46V32M16P-5B IT:F TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 66‑pin TSSOP package. It implements a double-data-rate, pipelined architecture with source‑synchronous DQS timing and internal DLL for aligned data capture.

Designed for systems requiring industrial temperature range operation, a 2.5 V I/O interface and support for up to 200 MHz clocking, this device targets memory subsystems where predictable timing, standard DDR signaling and compact TSOP packaging are required.

Key Features

• Core Architecture Double‑data‑rate (DDR) SDRAM with internal pipelined DDR architecture enabling two data transfers per clock cycle and an internal DLL for DQ/DQS alignment.
• Memory Organization 512 Mbit total capacity organized as 32M × 16 with four internal banks for concurrent operation.
• Data Timing & Burst Programmable burst lengths of 2, 4 or 8; bidirectional data strobe (DQS) transmitted/received with data (x16 has two DQS signals, one per byte).
• Performance Rated for up to 200 MHz clock frequency (speed grade -5B) with an access time of 700 ps and a write cycle time (word/page) of 15 ns.
• Interface & Signaling Differential clock inputs (CK/CK#), data mask (DM) (x16 has two DM signals), and 2.5 V I/O (SSTL_2 compatible).
• Refresh & Power Management Auto refresh and self refresh support (note: self refresh not available on AT devices per datasheet options); standard refresh counts of 8K cycles.
• Voltage & Temperature Supply voltage range VDD/VDDQ = 2.5 V ±0.2 V (or 2.6 V ±0.1 V for DDR400 option); industrial ambient operating temperature −40°C to +85°C (TA).
• Package 66‑pin TSSOP (0.400" / 10.16 mm width) plastic TSOP option for compact board-level integration and improved lead reliability.

Typical Applications

• Industrial memory subsystems Used as main DDR memory in industrial designs that require operation across −40°C to +85°C and standard 2.5 V DDR signaling.
• Embedded controllers and processors Provides parallel DDR storage for embedded controllers or processors needing 512 Mbit density and burstable access patterns.
• Board‑level module integration Suited for compact board designs where a 66‑TSSOP memory package and standard DDR interface simplify routing and integration.

Unique Advantages

• DDR source‑synchronous capture: DQS transmitted/received with data and an internal DLL provide aligned read/write timing for consistent data capture.
• Flexible timing options: Programmable burst lengths (2/4/8) and a -5B speed grade supporting up to 200 MHz enable designers to balance throughput and timing margins.
• Industrial temperature rating: Rated for −40°C to +85°C ambient operation for use in temperature‑sensitive deployments.
• SSTL_2 compatible I/O: 2.5 V I/O signaling supports standard DDR interface levels for interoperability with common DDR controller implementations.
• Compact TSOP packaging: 66‑pin TSSOP (10.16 mm width) delivers a small footprint with improved lead reliability for dense board designs.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16P-5B IT:F TR positions itself as a straightforward, industry‑temperature DDR SDRAM option delivering 512 Mbit density in a compact 66‑TSSOP package. Its DDR architecture with DQS, DLL alignment and programmable burst lengths provides predictable timing behavior suitable for parallel DDR memory subsystems.

This device is appropriate for designers seeking a 2.5 V DDR memory solution with up to 200 MHz clocking, industrial temperature capability and a compact TSOP form factor—offering clear electrical and mechanical attributes for integration into industrial and embedded board designs.

Request a quote or contact sales to discuss availability, lead times and volume pricing for the MT46V32M16P-5B IT:F TR.