MT46V32M16FN-75:C TR
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,382 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 5 (48 Hours) | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16FN-75:C TR – IC DRAM 512MBIT PARALLEL 60FBGA
The MT46V32M16FN-75:C TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It is designed for systems that require on-board parallel DDR memory with defined timing and low-voltage operation.
Key electrical and timing characteristics provided include a 133 MHz clock frequency, 750 ps access time, and a 15 ns write cycle time (word page). The device is supplied in a compact 60-TFBGA package (60-FBGA, 10×12.5) and operates over a commercial temperature range of 0°C to 70°C with a supply voltage range of 2.3 V to 2.7 V.
Key Features
- Memory 512 Mbit DRAM organized as 32M × 16, offering parallel memory access in a standard DRAM format.
- Technology DDR SDRAM architecture with a parallel interface suited to designs requiring double data rate operation.
- Performance 133 MHz clock frequency, 750 ps access time and 15 ns write cycle time (word page) for defined timing behavior.
- Power Operates from a 2.3 V to 2.7 V supply voltage range to support low-voltage system designs.
- Package & Mounting 60-TFBGA package (60-FBGA, 10×12.5) providing a compact board footprint for surface-mount assembly.
- Temperature Range Commercial operating temperature range of 0°C to 70°C (TA).
- Compliance RoHS status: Not specified.
Typical Applications
- Board-level memory expansion Use as a parallel DDR DRAM component to add 512 Mbit of volatile storage on system PCBs.
- Embedded systems Integrate into embedded designs requiring a compact 60-FBGA package and defined DDR timing.
- Prototyping and development Suitable for development platforms and evaluation boards that need a parallel 32M × 16 memory device.
Unique Advantages
- High-density 512 Mbit capacity: Provides substantial on-board memory in a single 32M × 16 device, reducing the number of components required.
- Defined DDR timing: 133 MHz clock, 750 ps access time and 15 ns write cycle time offer predictable performance for timing-sensitive designs.
- Low-voltage operation: 2.3 V to 2.7 V supply supports lower-power system designs compared with higher-voltage alternatives.
- Compact TFBGA package: 60-FBGA (10×12.5) package minimizes PCB area while supporting surface-mount assembly processes.
- Commercial temperature rating: Rated for 0°C to 70°C operation to match standard commercial-environment applications.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT46V32M16FN-75:C TR provides a straightforward DDR SDRAM option for designs that need 512 Mbit of parallel memory in a compact BGA package. Its specified clock, access time and write cycle timings make it suitable for systems where predictable DDR behavior is required under a commercial temperature range.
Manufactured by Micron Technology Inc., this device is appropriate for designers and procurement teams seeking a defined-capability, low-voltage parallel DRAM component for board-level integration and embedded applications.
Request a quote or contact sales for pricing, lead times and availability for the MT46V32M16FN-75:C TR.
