MT46V32M16FN-75:C

The MT46V32M16FN-75:C is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 60-TFBGA package. It provides 133 MHz clock operation with an access time of 750 ps and a write cycle time (word page) of 15 ns.

Designed for systems requiring on-board volatile DRAM, this device delivers defined electrical and timing characteristics across a 2.3 V–2.7 V supply range and an operating temperature range of 0°C to 70°C (TA).

Key Features

• Memory Type and Format Volatile DRAM implemented as SDRAM - DDR, organized as 32M × 16 for a total of 512 Mbit.
• Performance 133 MHz clock frequency with a 750 ps access time and a 15 ns write cycle time (word page), providing defined timing for system memory operations.
• Voltage Operates from 2.3 V to 2.7 V, supporting common low-voltage DDR memory system designs.
• Interface Parallel memory interface suitable for designs that integrate discrete DRAM devices.
• Package 60-TFBGA package (60-FBGA, 10 × 12.5) supporting surface-mount assembly in compact board layouts.
• Operating Conditions Specified for an ambient temperature range of 0°C to 70°C (TA), enabling deployment in standard commercial-temperature environments.
• Manufacturer Supplied by Micron Technology Inc., carrying the part number MT46V32M16FN-75:C.

Typical Applications

• Embedded memory subsystems Use as a 512 Mbit DDR SDRAM component in designs that require a parallel DRAM interface and defined timing characteristics.
• Board-level DRAM expansion Suitable for adding discrete SDRAM capacity where a 32M × 16 organization and 60-TFBGA footprint fit the PCB layout.
• Commercial-temperature electronics Applied in systems operating within 0°C to 70°C that require a 2.3 V–2.7 V DDR memory solution.

Unique Advantages

• Clear timing specifications 133 MHz clock, 750 ps access time, and 15 ns write cycle time provide predictable memory performance for system integration.
• Compact BGA packaging 60-TFBGA (60-FBGA, 10 × 12.5) format allows high-density board placement while maintaining standard surface-mount compatibility.
• Standard low-voltage operation 2.3 V–2.7 V supply range facilitates integration into low-voltage DDR memory domains.
• Vendor-backed part Manufactured by Micron Technology Inc., enabling procurement of a named, production DRAM device.
• Defined thermal range Rated for 0°C to 70°C (TA), matching common commercial use cases.

Why Choose MT46V32M16FN-75:C?

The MT46V32M16FN-75:C positions itself as a straightforward, specification-driven 512 Mbit DDR SDRAM option for designs that require a 32M × 16 organization, parallel interface, and clearly defined timing and voltage requirements. Its 60-TFBGA footprint and commercial temperature rating make it suitable for compact, board-level memory implementations.

This part is appropriate for engineers and procurement teams seeking a Micron-sourced DRAM device with documented electrical characteristics (clock frequency, access time, write cycle time) and a standard low-voltage supply range for integration into existing SDRAM domains.

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