MT46V32M16FN-75 IT:C
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 83 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 5 (48 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16FN-75 IT:C – IC DRAM 512MBIT PARALLEL 60FBGA
The MT46V32M16FN-75 IT:C is a volatile DDR SDRAM device providing 512 Mbit of parallel DRAM memory in a 60-ball TFBGA package. It implements a 32M × 16 memory organization and is specified for operation from -40°C to 85°C with a 2.3 V–2.7 V supply range.
This component is intended for systems that require a parallel DDR memory interface with defined timing characteristics, compact package options, and industrial temperature operation.
Key Features
- Memory Architecture 512 Mbit DRAM organized as 32M × 16, implemented as DDR SDRAM for parallel memory access.
- Performance Rated clock frequency of 133 MHz with an access time of 750 ps and a write cycle time (word/page) of 15 ns for deterministic timing considerations.
- Power Operates from a 2.3 V to 2.7 V supply range, supporting low-voltage DDR system designs.
- Operating Temperature Specified for ambient operation from -40°C to 85°C (TA), suitable for extended temperature environments.
- Package Supplied in a 60-ball TFBGA package; supplier device package specified as 60-FBGA (10 × 12.5 mm).
- Interface Parallel memory interface (DRAM) suitable for designs requiring parallel DDR access topology.
Unique Advantages
- Compact ball-grid package: 60-TFBGA / 60-FBGA (10×12.5) package minimizes PCB footprint while delivering 512 Mbit density.
- Industrial temperature range: −40°C to 85°C specification supports deployments in environments with wide ambient temperature variation.
- Low-voltage operation: 2.3 V–2.7 V supply supports designs targeting reduced power rails and compatibility with low-voltage DDR domains.
- Defined timing parameters: 133 MHz clock rating, 750 ps access time, and 15 ns write cycle time provide clear timing margins for system integration.
- Parallel DDR format: 32M × 16 organization and parallel interface facilitate straightforward integration into parallel DRAM memory subsystems.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT46V32M16FN-75 IT:C combines DDR SDRAM architecture, a 512 Mbit capacity in a 32M × 16 organization, and a compact 60-ball FBGA/TFBGA package to provide a predictable, space-efficient parallel memory option. Its specified clock rate, access time, and write cycle time deliver defined timing characteristics for system designers.
This device is suited to designs requiring a parallel DRAM component with low-voltage operation and an extended ambient temperature range. The clear electrical and mechanical specifications support integration, qualification, and long-term deployment in applications that match the provided datasheet parameters.
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