MT46V32M16FN-6:C

IC DRAM 512MBIT PAR 60FBGA
Part Description

IC DRAM 512MBIT PAR 60FBGA

Quantity 1,113 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level5 (48 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16FN-6:C – IC DRAM 512MBIT PAR 60FBGA

The MT46V32M16FN-6:C is a 512 Mbit volatile DDR SDRAM offered by Micron Technology Inc., organized as 32M × 16 with a parallel memory interface. It delivers high-speed memory access with a 167 MHz clock frequency and a specified access time of 700 ps, targeted for systems requiring synchronous parallel DRAM.

This device is supplied in a 60-ball FBGA package (60-TFBGA / 60-FBGA, 10 × 12.5 mm), operates from 2.3 V to 2.7 V, and supports an operating ambient temperature range of 0°C to 70°C.

Key Features

  • Memory Core  512 Mbit DDR SDRAM organized as 32M × 16, suitable for parallel memory architectures.
  • Performance  Synchronous DDR operation at a 167 MHz clock frequency with a specified access time of 700 ps and a write cycle time (word page) of 15 ns.
  • Interface & Organization  Parallel memory interface designed for conventional DRAM system integration and bus architectures.
  • Power  Operating supply voltage range from 2.3 V to 2.7 V, enabling compatibility with low-voltage system rails.
  • Package & Mounting  60-ball TFBGA/FBGA package, supplier device package size 10 × 12.5 mm, intended for surface-mount assembly.
  • Operating Conditions  Ambient operating temperature range specified from 0°C to 70°C (TA).

Unique Advantages

  • Compact FBGA footprint: 60-ball package with 10 × 12.5 mm supplier package dimensions simplifies board space planning for compact designs.
  • High-speed access: 167 MHz clock and 700 ps access time provide deterministic read/write timing for synchronous parallel systems.
  • Standard density and organization: 512 Mbit capacity in a 32M × 16 arrangement supports straightforward memory mapping and sizing.
  • Low-voltage operation: 2.3 V to 2.7 V supply range aligns with low-voltage system domains for power-constrained designs.
  • Defined timing for page writes: 15 ns write cycle time (word page) provides a clear timing parameter for system memory scheduling.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V32M16FN-6:C provides a balanced combination of capacity, timing, and packaging for designs that require a parallel DDR SDRAM solution. Its specified clock frequency, access time, and write-cycle timing give engineers concrete parameters for system timing and memory performance planning.

With a compact 60-FBGA package and a defined supply voltage and temperature range, this DRAM device is suited to applications where board space, predictable timing, and low-voltage compatibility are primary considerations. The Micron designation identifies manufacturer sourcing for supply-chain visibility.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT46V32M16FN-6:C.

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