MT46V32M16FN-6 IT:C
| Part Description |
IC DRAM 512MBIT PAR 60FBGA |
|---|---|
| Quantity | 265 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 5 (48 Hours) | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16FN-6 IT:C – IC DRAM 512Mbit PAR 60FBGA
The MT46V32M16FN-6 IT:C is a 512 Mbit DDR SDRAM organized as 32M × 16 and manufactured by Micron Technology Inc. It implements a parallel DDR memory architecture with a 60-ball FBGA package footprint.
This device targets designs that require on-board parallel DDR memory with defined timing and electrical characteristics, offering a compact FBGA package, a 167 MHz clock frequency, and a supply range of 2.3 V to 2.7 V.
Key Features
- Memory Architecture 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface for system integration.
- Performance Rated clock frequency: 167 MHz; access time of 700 ps and write cycle time (word page) of 15 ns to support defined memory timing.
- Power Operates from a supply voltage range of 2.3 V to 2.7 V, suitable for systems designed around this DDR voltage domain.
- Package Supplied in a 60-ball TFBGA / 60-FBGA (10 × 12.5 mm) package to minimize PCB area while providing BGA mounting.
- Operating Range Qualified for an ambient temperature range of −40°C to 85°C (TA), supporting a wide range of thermal environments.
Typical Applications
- Embedded systems — Use as onboard parallel DDR memory where a 512 Mbit capacity and 32M × 16 organization are required for program or data storage.
- Networking and communications equipment — Implements compact DDR memory buffering in systems constrained by board area and power budget.
- Industrial electronics — Provides volatile DDR storage in equipment operating across −40°C to 85°C ambient conditions.
Unique Advantages
- Parallel DDR interface: Enables direct parallel memory integration with a 32M × 16 organization for straightforward system memory mapping.
- Defined timing performance: 167 MHz clock frequency with 700 ps access time and 15 ns write cycle time for predictable memory behavior.
- Compact BGA footprint: 60-TFBGA / 60-FBGA (10 × 12.5 mm) package reduces PCB area while maintaining BGA assembly compatibility.
- Wide operating temperature range: −40°C to 85°C rating supports deployment in varied thermal environments.
- Controlled supply range: Operates from 2.3 V to 2.7 V to match systems designed for this DDR voltage domain.
Why Choose IC DRAM 512MBIT PAR 60FBGA?
The MT46V32M16FN-6 IT:C positions itself as a compact, parallel DDR DRAM solution with clear electrical and timing specifications: a 512 Mbit capacity, 32M × 16 organization, 167 MHz clock rating, and specified access and write-cycle timings. Its 60-ball FBGA package and −40°C to 85°C operating range make it suitable for designs that require a small footprint and defined environmental performance.
This device is appropriate for engineers specifying onboard DDR memory where predictable timing, a known supply voltage window, and compact package form factor are required. It delivers straightforward integration for designs needing 512 Mbit of volatile DDR storage from a single-source manufacturer.
Request a quote or submit an inquiry to obtain pricing, availability, and ordering information for MT46V32M16FN-6 IT:C.
