MT46V32M16FN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 871 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level5 (48 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16FN-5B:C – IC DRAM 512MBIT PARALLEL 60FBGA

The MT46V32M16FN-5B:C is a 512 Mbit DDR SDRAM organized as 32M x 16 in a parallel memory interface. It is packaged in a 60-TFBGA (supplier package: 60-FBGA 10×12.5) and operates from a 2.5 V to 2.7 V supply.

Designed for board-level DRAM requirements, the device targets systems that require synchronous DDR memory operation at a 200 MHz clock, with specified access and cycle timings and an ambient operating range of 0°C to 70°C.

Key Features

  • Memory Architecture — 512 Mbit DRAM organized as 32M x 16 in SDRAM - DDR format, providing parallel memory access.
  • Performance — Specifies a 200 MHz clock frequency, 700 ps access time, and a write cycle time (word page) of 15 ns.
  • Power — Operates from a 2.5 V to 2.7 V supply rail suitable for 2.5 V DDR applications.
  • Package & Mounting — 60-TFBGA package; supplier device package noted as 60-FBGA (10×12.5); surface-mount FBGA footprint for compact board integration.
  • Operating Range — Ambient operating temperature specified at 0°C to 70°C (TA).
  • Memory Format & Interface — Volatile DRAM with a parallel memory interface for synchronous DDR operation.

Typical Applications

  • Parallel memory subsystems — Acts as a 512 Mbit DDR SDRAM component in systems requiring a 32M x 16 parallel memory configuration.
  • Board-level DRAM expansion — Used where additional volatile DRAM capacity is needed on a PCB with a 60-FBGA footprint.
  • 200 MHz DDR systems — Suitable for designs that operate synchronous DDR memory at a 200 MHz clock and require the listed timing characteristics.

Unique Advantages

  • Compact FBGA packaging: 60-TFBGA (60-FBGA 10×12.5) reduces board area while providing a standard surface-mount DRAM footprint.
  • Defined timing performance: 200 MHz clock with 700 ps access time and 15 ns write cycle time (word page) for predictable memory timing behavior.
  • <strong-Wide supply tolerance: Supports a 2.5 V to 2.7 V supply range compatible with 2.5 V DDR power rails.
  • Clear operating temperature: Specified for 0°C to 70°C ambient operation, enabling selection for temperature-constrained designs.
  • Standard memory organization: 32M x 16 arrangement simplifies addressing and integration into parallel-memory architectures.

Why Choose MT46V32M16FN-5B:C?

The MT46V32M16FN-5B:C provides a clearly specified 512 Mbit DDR SDRAM solution from Micron Technology Inc., combining a 32M x 16 organization with a 200 MHz synchronous DDR interface and defined timing parameters. Its 60-TFBGA package and 2.5 V–2.7 V supply make it suitable for compact board designs that require parallel DRAM capacity with explicit electrical and thermal limits.

This device is appropriate for engineers and procurement teams sourcing a documented DDR DRAM component for systems that match the listed clock, timing, voltage, and temperature requirements. The straightforward specification set supports predictable integration into memory subsystems where these exact parameters are required.

Request a quote or submit an inquiry to receive pricing and availability information for the MT46V32M16FN-5B:C.

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