MT46V32M16CY-5B XIT:J TR

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 705 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeIndustrial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of MT46V32M16CY-5B XIT:J TR – IC DRAM 512Mbit DDR SDRAM, 60‑FBGA

The MT46V32M16CY-5B XIT:J TR is a 512 Mbit volatile DDR SDRAM organized as 32M × 16 with a parallel memory interface. It is designed to provide external DRAM storage for systems that require synchronous DDR memory in a compact 60‑FBGA package.

Key characteristics include a 200 MHz clock frequency, 700 ps access time, and a supply voltage range of 2.5 V to 2.7 V, making it suitable for designs that demand predictable timing and moderate speed parallel DDR memory.

Key Features

  • Memory Core 512 Mbit DRAM organized as 32M × 16, implemented as DDR SDRAM for synchronous parallel operation.
  • Performance 200 MHz clock frequency with 700 ps access time and a 15 ns write cycle time (word/page) for deterministic memory timing.
  • Power Operates across a 2.5 V to 2.7 V supply range, enabling compatibility with legacy 2.5 V DDR systems.
  • Package Supplied in a 60‑FBGA package (60‑TFBGA / 60‑FBGA, 8×12.5), supporting compact board-level integration.
  • Temperature Range Rated for operation from −40 °C to 85 °C (TA), supporting a wide ambient temperature envelope.
  • Interface Parallel memory interface suitable for systems using discrete DDR DRAM devices.

Typical Applications

  • System Memory Expansion — Provides additional external DDR memory capacity for designs requiring 512 Mbit parallel DRAM.
  • Embedded Controllers and Modules — Used where synchronous DDR storage with defined timing and a compact FBGA footprint is required.
  • Data Buffering — Acts as a parallel buffer memory in systems that need predictable access times and word/page write cycles.

Unique Advantages

  • Compact FBGA Package: The 60‑FBGA (60‑TFBGA, 8×12.5) footprint enables dense board integration while providing standard BGA mounting.
  • Synchronous DDR Operation: DDR SDRAM architecture with a 200 MHz clock provides synchronous timing useful for designs that rely on precise memory clocking.
  • Deterministic Timing: 700 ps access time and 15 ns write cycle time (word/page) support applications that require consistent memory latency.
  • Wide Operating Temperature: −40 °C to 85 °C rating supports deployment across a broad range of ambient conditions.
  • Standard Voltage Range: 2.5 V to 2.7 V supply compatibility simplifies integration into systems that operate at legacy DDR voltages.

Why Choose MT46V32M16CY-5B XIT:J TR?

The MT46V32M16CY-5B XIT:J TR offers a compact, synchronous DDR DRAM solution with clearly defined timing, a moderate clock rate, and standard 2.5 V class supply operation. Its 32M × 16 organization and 512 Mbit capacity make it suitable for designers needing parallel external memory with predictable access characteristics.

This device is appropriate for engineers and procurement teams targeting reliable DRAM capacity in a 60‑FBGA package where operating temperature range and standard DDR timing parameters are important considerations for system integration and long-term design stability.

Request a quote or contact sales to obtain pricing, lead time, and availability for the MT46V32M16CY-5B XIT:J TR.

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