MT46V32M16CY-5B AIT:J TR

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 1,909 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeAutomotive
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0036

Overview of MT46V32M16CY-5B AIT:J TR – IC DRAM 512MBIT PARALLEL 60FBGA

The MT46V32M16CY-5B AIT:J TR is a 512 Mbit DDR (Double Data Rate) SDRAM organized as 32M × 16 with a parallel memory interface. It implements an internal pipelined DDR architecture with source-synchronous DQS and a DLL to align data transitions, delivering two data transfers per clock cycle.

Designed and qualified for demanding use, the device supports a 200 MHz clock rate (–5B speed grade), operates from 2.5 V to 2.7 V, and carries AEC-Q100 qualification with an operating temperature range of –40°C to +85°C (TA).

Key Features

  • Core / Architecture  Internal pipelined DDR architecture supporting two data accesses per clock cycle, differential clock inputs (CK/CK#), and an on-die DLL for DQ/DQS alignment.
  • Memory Organization  512 Mbit capacity organized as 32M × 16 with four internal banks and data mask (DM) support (x16 has two DMs — one per byte).
  • Performance & Timing  200 MHz clock frequency for the –5B speed grade (DDR400B timing option); access window and data-out timing designed for CL = 3 with a 1.6 ns data-out window and an access time on the order of 700 ps.
  • Power  VDD / VDDQ supply range supported at 2.5 V ±0.2 V (documented product range 2.5 V to 2.7 V), with SSTL_2-compatible 2.5 V I/O.
  • Refresh & Control  Auto refresh with an 8K refresh count and programmable burst lengths of 2, 4, or 8; concurrent auto precharge and standard DDR command set behavior.
  • Signal Timing & Capture  Bidirectional data strobe (DQS) transmitted/received with data (edge-aligned for READs, center-aligned for WRITEs) to enable source-synchronous data capture.
  • Reliability & Qualification  AEC-Q100 qualification and an operating temperature range of –40°C to +85°C (TA) for automotive/industrial applications requiring qualified components.
  • Package  60-ball TFBGA / FBGA package (60-FBGA, 8 × 12.5 mm footprint) for compact board-level integration.

Typical Applications

  • Automotive Electronics  Automotive-grade DDR memory for systems requiring AEC-Q100-qualified volatile DRAM modules within the device temperature range.
  • Embedded Systems  Parallel DDR memory for embedded controllers and modules that need a 16-bit data path and standard DDR features (burst access, auto refresh).
  • Industrial Control  Memory subsystem in industrial applications that require AEC-Q100 qualification and operation over –40°C to +85°C ambient.
  • Memory Subsystems  Integration into boards and modules that use a parallel DDR interface and compact 60-ball FBGA packaging.

Unique Advantages

  • AEC-Q100 Qualified:  Delivered with AEC-Q100 qualification to address reliability needs in automotive and harsh-environment applications.
  • DDR Performance at 200 MHz:  –5B speed grade supports a 200 MHz clock rate with CL = 3 timing, enabling double-data-rate throughput with a documented data-out window.
  • Robust DDR Feature Set:  Built-in DLL, DQS source-synchronous capture, programmable burst lengths, and concurrent auto precharge simplify high-speed memory design and timing closure.
  • Compact, Board-Friendly Package:  60-ball FBGA (8 × 12.5 mm) provides a small footprint for space-constrained PCBs while supporting a 16-bit data interface.
  • Wide Supply Range:  Operates across a 2.5 V to 2.7 V supply window compatible with 2.5 V I/O signaling standards.
  • Standard Refresh Behavior:  8K refresh count and auto-refresh support help maintain data integrity with standard DDR refresh mechanisms.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16CY-5B AIT:J TR positions itself as a compact, automotive‑qualified DDR SDRAM device combining standard DDR feature sets (DLL, DQS, programmable bursts) with a 16-bit organization and a 60-ball FBGA footprint. Its –5B speed grade and 200 MHz clock capability deliver double-data-rate throughput while operating from a 2.5–2.7 V supply.

This device is well suited to designs that require a qualified, board-level DDR memory building block—particularly where AEC-Q100 qualification, a wide operating temperature range (–40°C to +85°C TA), and compact packaging are priorities for long-term robustness and predictable integration.

Request a quote or contact sales to discuss availability, lead times, and pricing for MT46V32M16CY-5B AIT:J TR.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay
    Featured Products
    Latest News
    keyboard_arrow_up