MT46V32M16CY-5B AIT:J TR
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,909 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Automotive | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT46V32M16CY-5B AIT:J TR – IC DRAM 512MBIT PARALLEL 60FBGA
The MT46V32M16CY-5B AIT:J TR is a 512 Mbit DDR (Double Data Rate) SDRAM organized as 32M × 16 with a parallel memory interface. It implements an internal pipelined DDR architecture with source-synchronous DQS and a DLL to align data transitions, delivering two data transfers per clock cycle.
Designed and qualified for demanding use, the device supports a 200 MHz clock rate (–5B speed grade), operates from 2.5 V to 2.7 V, and carries AEC-Q100 qualification with an operating temperature range of –40°C to +85°C (TA).
Key Features
- Core / Architecture Internal pipelined DDR architecture supporting two data accesses per clock cycle, differential clock inputs (CK/CK#), and an on-die DLL for DQ/DQS alignment.
- Memory Organization 512 Mbit capacity organized as 32M × 16 with four internal banks and data mask (DM) support (x16 has two DMs — one per byte).
- Performance & Timing 200 MHz clock frequency for the –5B speed grade (DDR400B timing option); access window and data-out timing designed for CL = 3 with a 1.6 ns data-out window and an access time on the order of 700 ps.
- Power VDD / VDDQ supply range supported at 2.5 V ±0.2 V (documented product range 2.5 V to 2.7 V), with SSTL_2-compatible 2.5 V I/O.
- Refresh & Control Auto refresh with an 8K refresh count and programmable burst lengths of 2, 4, or 8; concurrent auto precharge and standard DDR command set behavior.
- Signal Timing & Capture Bidirectional data strobe (DQS) transmitted/received with data (edge-aligned for READs, center-aligned for WRITEs) to enable source-synchronous data capture.
- Reliability & Qualification AEC-Q100 qualification and an operating temperature range of –40°C to +85°C (TA) for automotive/industrial applications requiring qualified components.
- Package 60-ball TFBGA / FBGA package (60-FBGA, 8 × 12.5 mm footprint) for compact board-level integration.
Typical Applications
- Automotive Electronics Automotive-grade DDR memory for systems requiring AEC-Q100-qualified volatile DRAM modules within the device temperature range.
- Embedded Systems Parallel DDR memory for embedded controllers and modules that need a 16-bit data path and standard DDR features (burst access, auto refresh).
- Industrial Control Memory subsystem in industrial applications that require AEC-Q100 qualification and operation over –40°C to +85°C ambient.
- Memory Subsystems Integration into boards and modules that use a parallel DDR interface and compact 60-ball FBGA packaging.
Unique Advantages
- AEC-Q100 Qualified: Delivered with AEC-Q100 qualification to address reliability needs in automotive and harsh-environment applications.
- DDR Performance at 200 MHz: –5B speed grade supports a 200 MHz clock rate with CL = 3 timing, enabling double-data-rate throughput with a documented data-out window.
- Robust DDR Feature Set: Built-in DLL, DQS source-synchronous capture, programmable burst lengths, and concurrent auto precharge simplify high-speed memory design and timing closure.
- Compact, Board-Friendly Package: 60-ball FBGA (8 × 12.5 mm) provides a small footprint for space-constrained PCBs while supporting a 16-bit data interface.
- Wide Supply Range: Operates across a 2.5 V to 2.7 V supply window compatible with 2.5 V I/O signaling standards.
- Standard Refresh Behavior: 8K refresh count and auto-refresh support help maintain data integrity with standard DDR refresh mechanisms.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT46V32M16CY-5B AIT:J TR positions itself as a compact, automotive‑qualified DDR SDRAM device combining standard DDR feature sets (DLL, DQS, programmable bursts) with a 16-bit organization and a 60-ball FBGA footprint. Its –5B speed grade and 200 MHz clock capability deliver double-data-rate throughput while operating from a 2.5–2.7 V supply.
This device is well suited to designs that require a qualified, board-level DDR memory building block—particularly where AEC-Q100 qualification, a wide operating temperature range (–40°C to +85°C TA), and compact packaging are priorities for long-term robustness and predictable integration.
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