MT46V32M16CY-5B:J

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 89 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of MT46V32M16CY-5B:J – 512 Mbit DDR SDRAM, 60-FBGA

The MT46V32M16CY-5B:J is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It is provided in a 60-ball FBGA package and is intended for systems requiring mid-density, volatile DDR memory in a compact footprint.

Key electrical and timing characteristics include a 200 MHz clock frequency, 700 ps access time, a write cycle time (word page) of 15 ns, and an operating voltage range of 2.5 V to 2.7 V. The device is specified for commercial temperature operation (0°C to 70°C TA).

Key Features

  • Memory Architecture 512 Mbit capacity arranged as 32M × 16, implemented as DDR SDRAM for parallel memory systems.
  • Timing and Performance 200 MHz clock frequency and 700 ps access time; write cycle time (word page) specified at 15 ns for predictable timing behavior.
  • Power Operating voltage range of 2.5 V to 2.7 V to match standard DDR supply domains.
  • Interface Parallel DDR memory interface suitable for systems designed around a parallel DRAM bus.
  • Package 60-ball FBGA package (listed as 60-TFBGA and 60-FBGA (8×12.5)) for compact board footprint and surface-mount assembly.
  • Operating Environment Commercial temperature grade with an operating range of 0°C to 70°C (TA).
  • Volatile Memory Device is volatile DRAM intended for transient data storage in system memory applications.

Typical Applications

  • Embedded Systems Provides mid-density DDR memory for embedded applications that require a parallel interface and compact FBGA package.
  • Networking and Communications Equipment Suitable for equipment that integrates parallel DDR SDRAM for buffering and temporary storage where 512 Mbit capacity is required.
  • Consumer and Industrial Electronics Can be used in commercial-temperature-range devices that need volatile DDR memory in a small surface-mount package.

Unique Advantages

  • 512 Mbit Density Offers a balance of capacity and footprint with a 32M × 16 organization suitable for mid-density memory needs.
  • Defined Timing Parameters 200 MHz clock and 700 ps access time provide clear, verifiable timing characteristics for system integration.
  • Standard DDR Voltage Range 2.5 V–2.7 V supply compatibility aligns with common DDR power domains for simpler power sequencing.
  • Compact FBGA Package 60-ball FBGA (60-TFBGA / 60-FBGA (8×12.5)) reduces board area while supporting surface-mount assembly processes.
  • Commercial Temperature Rating Specified operation from 0°C to 70°C (TA) for designs targeting commercial-environment deployments.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16CY-5B:J positions itself as a practical mid-density DDR SDRAM option for designs that require a parallel DDR interface, predictable timing, and a compact FBGA package. Its specified clock, access time, and write-cycle timing make it straightforward to integrate into systems where those parameters are defining factors.

This device is well suited to engineers and procurement teams specifying volatile DDR memory for commercial-temperature embedded, communications, and consumer electronic designs that need a 512 Mbit capacity in a 60-ball FBGA footprint and a 2.5 V–2.7 V supply domain.

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