MT46V32M16CY-5B AIT:J

The MT46V32M16CY-5B AIT:J is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It implements an internal pipelined double-data-rate (DDR) architecture to deliver two data accesses per clock cycle and supports source-synchronous data capture with DQS.

Designed for applications requiring robust, high-speed parallel DRAM, this device targets automotive-grade and industrial embedded designs that need qualified DDR memory in a compact 60-ball FBGA package.

Key Features

• Core / Architecture  Internal pipelined DDR architecture with two data accesses per clock cycle and differential clock inputs (CK / CK#).
• Memory Organization  512 Mbit total capacity organized as 32M × 16 with 4 internal banks for concurrent operation.
• Performance & Timing  Rated clock frequency 200 MHz (DDR), access time 700 ps, and write cycle time (word page) of 15 ns. Speed grade -5B supports 5 ns cycle time (CL = 3).
• Data Capture & Masking  Bidirectional data strobe (DQS) transmitted/received with data; data mask (DM) supported (x16 devices provide two DM signals, one per byte).
• Power & I/O  VDD / VDDQ supply 2.5 V ±0.2 V (standard) and supported supply range 2.5 V to 2.7 V; 2.5 V I/O (SSTL_2 compatible).
• Refresh & Burst  Auto refresh supported with 8K refresh cycles and programmable burst lengths of 2, 4, or 8.
• Package  60-ball FBGA package (10 mm × 12.5 mm footprint option) for compact board integration.
• Qualification & Temperature  AEC‑Q100 qualification and operating ambient temperature range of -40 °C to +85 °C (TA), targeting automotive-grade applications.

Typical Applications

• Automotive electronic systems  Automotive-grade DDR memory for embedded controllers and modules where AEC‑Q100 qualification and -40 °C to +85 °C operation are required.
• Industrial embedded systems  Parallel DDR memory for industrial controllers and instrumentation that require rugged temperature ratings and compact packaging.
• High-speed parallel memory subsystems  Use as board-level DDR SDRAM for systems that leverage source-synchronous DQS and programmable burst lengths for predictable data transfer patterns.

Unique Advantages

• DDR source-synchronous data capture: Bidirectional DQS with edge alignment for READs and center alignment for WRITEs improves reliable high-speed transfers in parallel DDR designs.
• Automotive-grade qualification: AEC‑Q100 qualification and specified -40 °C to +85 °C operating range provide component-level assurance for automotive and harsh-environment use.
• Compact FBGA footprint: 60-ball FBGA (10 mm × 12.5 mm option) enables tight board layouts while maintaining a parallel memory interface.
• High effective data rate: Double-data-rate operation at 200 MHz clock (DDR) yields two data transfers per clock cycle for higher throughput without higher clock frequencies.
• SSTL_2 compatible I/O: 2.5 V I/O and VDD/VDDQ supply options align with common DDR signaling standards for straightforward system integration.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16CY-5B AIT:J positions itself as a compact, automotive‑qualified DDR SDRAM option for designers needing a 512 Mbit, 32M × 16 parallel memory solution. Its DDR architecture, DQS support and programmable burst lengths make it suitable for systems requiring predictable, high-speed parallel data transfers within a small FBGA package.

This device is appropriate for engineers and procurement teams specifying automotive or industrial embedded memory where AEC‑Q100 qualification, wide ambient temperature range, and SSTL_2 2.5 V I/O compatibility are design drivers.

Request a quote or submit an inquiry to receive pricing, availability, and ordering information for the MT46V32M16CY-5B AIT:J.