MT46V32M16CY-5B AAT:J

The MT46V32M16CY-5B AAT:J is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It implements a double-data-rate architecture with source-synchronous DQS signaling and an internal DLL for aligned data capture.

Engineered for temperature- and reliability-sensitive systems, this AEC‑Q100 qualified device supports an operating range of −40°C to +105°C, a 60‑ball FBGA package, and a supply range of 2.3 V to 2.7 V — suitable for automotive-grade and other industrial embedded applications requiring DDR memory.

Key Features

• Core / Architecture  Internal pipelined DDR architecture providing two data transfers per clock cycle with bidirectional DQS for source‑synchronous data capture.
• Memory Organization  512 Mbit capacity organized as 32M × 16 with four internal banks to support concurrent operations.
• Performance & Timing  Rated for a 200 MHz clock frequency (DDR) with an access time of 700 ps and a write cycle time (word/page) of 15 ns.
• Programmable Burst & Control  Supports programmable burst lengths (2, 4, or 8) and standard DDR command timing conventions (CK/CK#, command on positive CK edge).
• Voltage & I/O  Operates from 2.3 V to 2.7 V supply and is compatible with 2.5 V I/O signaling as defined in the datasheet.
• Reliability & Qualification  AEC‑Q100 qualification and an operating ambient temperature range of −40°C to +105°C for applications that require automotive-grade thermal performance.
• Package & Mounting  60‑ball Thin FBGA (60‑TFBGA / 60‑FBGA, 8 mm × 12.5 mm footprint) optimized for compact board-level mounting.

Typical Applications

• Automotive Electronic Modules  Memory for control units and subsystems where AEC‑Q100 qualification and −40°C to +105°C operation are required.
• Industrial Embedded Systems  Volatile DDR storage for embedded controllers and processors operating across wide temperature ranges.
• On‑board Memory Subsystems  Parallel DDR interface for systems that require source‑synchronous data capture and burst transfers.
• High‑reliability Designs  Applications that require qualified components and compact FBGA packaging for dense board layouts.

Unique Advantages

• Automotive‑grade qualification: AEC‑Q100 certification plus −40°C to +105°C operating range supports deployment in temperature‑extreme environments.
• DDR source‑synchronous performance: Bidirectional DQS and an internal DLL enable aligned reads/writes and two transfers per clock cycle for higher bandwidth density.
• Compact FBGA package: 60‑ball FBGA (8 × 12.5 mm) provides a small footprint for space‑constrained PCB designs.
• Flexible voltage range: 2.3 V to 2.7 V supply accommodates system designs targeting 2.5 V I/O signaling.
• Configurable burst behavior: Programmable burst lengths (2, 4, 8) and four internal banks allow optimized throughput for burst‑oriented workloads.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16CY-5B AAT:J positions itself as a qualified DDR SDRAM building block for systems that require compact, automotive‑grade volatile memory with source‑synchronous DDR performance. Its 32M × 16 organization, 200 MHz clock rating, and 60‑ball FBGA package make it suitable for embedded designs that need predictable timing and a small board footprint.

Designers targeting robust, temperature‑tolerant memory solutions will find this device useful where AEC‑Q100 qualification, a wide operating temperature range, and standard DDR control features are required for long‑term product deployment.

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