MT46V32M16FN-6 IT:F

The MT46V32M16FN-6 IT:F is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 60-ball FBGA (10 mm × 12.5 mm) package. It implements a pipelined double-data-rate architecture with source-synchronous data capture and on-chip DLL to support two data transfers per clock cycle.

Designed for systems requiring synchronous parallel DRAM in industrial temperature environments, the device operates at a typical clock frequency of 167 MHz and a supply voltage range of 2.3 V to 2.7 V, delivering predictable timing and compact board-level integration.

Key Features

• Core DDR Architecture Internal pipelined DDR design enables two data accesses per clock cycle and includes an on-chip DLL for timing alignment.
• Memory Organization 512 Mbit capacity arranged as 32M × 16 with four internal banks for concurrent operation and flexible addressing.
• Data Strobe and Capture Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 devices include two DQS signals (one per byte).
• Differential Clock and Command Timing Differential clock inputs (CK and CK#) with commands entered on positive CK edges to support synchronous operation.
• Programmable Burst and Masking Programmable burst lengths of 2, 4, or 8 and data mask (DM) support (x16 has two DM lines, one per byte) for controlled write masking and burst transfers.
• Refresh and Self-Refresh Auto refresh support and self-refresh capability (note: self-refresh availability varies by device option as described in the datasheet).
• Timing and Performance Rated for 167 MHz operation (speed grade -6), with an access time specification of 700 ps and a write cycle (word page) time of 15 ns.
• Power and I/O Operates from a 2.3 V to 2.7 V supply; 2.5 V I/O signaling (SSTL_2 compatible) as specified in the device documentation.
• Package and Thermal 60-ball TFBGA package (10 mm × 12.5 mm) and industrial operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

• Embedded Systems Used as main or auxiliary DRAM in embedded platforms requiring synchronous parallel DDR memory and compact FBGA packaging.
• Industrial Control Suitable for industrial equipment operating across −40 °C to +85 °C where consistent DDR timing and refresh support are required.
• Networking and Telecom Modules Fits applications needing predictable burst transfers and source-synchronous data capture for memory buffer or packet processing tasks.

Unique Advantages

• High-throughput DDR operation: Two data transfers per clock cycle and 167 MHz-rated operation enable increased effective bandwidth compared with single-rate DRAM.
• Source-synchronous data capture: Bidirectional DQS and on-chip DLL improve timing alignment between DQ and clock for reliable read/write margins.
• Flexible burst and bank architecture: Programmable burst lengths and four internal banks allow designers to optimize access patterns for system performance.
• Industrial temperature rating: Specified for −40 °C to +85 °C (TA), enabling deployment in temperature-demanding environments.
• Compact FBGA package: 60-ball (10 mm × 12.5 mm) FBGA provides a small footprint for space-constrained PCBs.
• Low-voltage operation: 2.3 V to 2.7 V supply range with 2.5 V I/O signaling supports lower-power system designs using SSTL_2-compatible interfaces.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V32M16FN-6 IT:F combines a 512 Mbit DDR SDRAM architecture with industrial temperature rating and a compact 60-ball FBGA package, making it suitable for designs that demand synchronous parallel DDR memory with predictable timing. Its source-synchronous DQS, on-chip DLL, programmable burst lengths and four-bank organization provide designers the timing control and access flexibility required for embedded, industrial, and module-level memory applications.

This device is appropriate for engineers specifying a 32M × 16 DDR memory device with 167 MHz operation and a 2.3 V–2.7 V supply window, offering a balance of footprint, timing features, and industrial thermal range for medium-density DRAM requirements.

Request a quote or contact sales to discuss availability and pricing for the MT46V32M16FN-6 IT:F and to obtain full technical documentation for system integration.