MT46V32M16FN-6:C TR

IC DRAM 512MBIT PAR 60FBGA
Part Description

IC DRAM 512MBIT PAR 60FBGA

Quantity 1,734 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level5 (48 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16FN-6:C TR – 512 Mbit DDR Parallel DRAM, 60‑FBGA

The MT46V32M16FN-6:C TR is a 512 Mbit volatile DDR SDRAM organized as 32M × 16 in a 60‑TFBGA package. It provides parallel memory access with a specified clock frequency of 167 MHz and an access time of 700 ps.

This device is intended for designs that require parallel DDR volatile memory in a compact FBGA footprint, offering defined timing, supply, and operating-temperature characteristics for commercial applications.

Key Features

  • Memory Type & Capacity Volatile DDR SDRAM with a memory size of 512 Mbit, organized as 32M × 16.
  • Performance Clock frequency specified at 167 MHz and an access time of 700 ps; write cycle time (word/page) of 15 ns.
  • Interface Parallel memory interface suitable for parallel DDR memory architectures.
  • Power Operating supply voltage range from 2.3 V to 2.7 V.
  • Package 60‑TFBGA package case (supplier device package: 60‑FBGA, 10 × 12.5 mm).
  • Operating Conditions Commercial operating temperature range of 0°C ~ 70°C (TA).

Unique Advantages

  • 512 Mbit density: Provides half‑gigabit capacity in a single 32M × 16 device for mid‑capacity memory needs.
  • Parallel DDR architecture: 32M × 16 organization with a 167 MHz clock supports parallel DDR memory implementations.
  • Defined timing characteristics: 700 ps access time and 15 ns write cycle time enable predictable timing for system design.
  • Narrow supply window: 2.3 V to 2.7 V supply range aligns with systems designed for this voltage domain.
  • Compact FBGA package: 60‑TFBGA (10 × 12.5 mm) footprint supports space‑constrained board layouts.
  • Commercial temperature range: Rated for 0°C ~ 70°C (TA) for standard commercial environments.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V32M16FN-6:C TR positions itself as a straightforward DDR SDRAM option where 512 Mbit of volatile parallel memory is required in a small FBGA package. Its specified clock, access time, and write cycle parameters provide clear electrical and timing characteristics for integration into parallel memory subsystems.

This device is suitable for designers and procurement teams seeking a compact, defined-performance DDR memory component for commercial temperature applications, offering predictable supply and timing attributes for system integration and validation.

Request a quote or submit an inquiry to receive pricing and availability information for MT46V32M16FN-6:C TR.

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