MT46V32M16FN-6:F

The MT46V32M16FN-6:F is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 60-ball FBGA package. It implements an internal pipelined double-data-rate architecture with source-synchronous data capture and on-die DLL for timing alignment.

Designed for systems requiring parallel DDR memory at a 167 MHz clock rate (DDR333 timing), this device provides programmable burst lengths, byte-level write masking, and four internal banks to support concurrent memory operations within a commercial temperature range.

Key Features

• Memory Architecture 512 Mbit density organized as 32M × 16 with four internal banks for concurrent operation.
• Double Data Rate (DDR) Internal pipelined DDR architecture delivers two data accesses per clock cycle with differential clock inputs (CK/CK#).
• Timing and Performance Speed grade -6 supports a 167 MHz clock rate (DDR333) with an access time of 700 ps and a write cycle time (word/page) of 15 ns.
• Data Strobe and Masking Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; data mask (DM) supported (x16 devices include two DQS/DM signals, one per byte).
• Programmable Burst and Refresh Programmable burst lengths of 2, 4, or 8 and standard auto-refresh (8192 cycles per 64 ms for commercial devices).
• Voltage and I/O Supply range documented as 2.3 V to 2.7 V (VDD/VDDQ nominally +2.5 V ±0.2 V); 2.5 V I/O (SSTL_2 compatible) per datasheet.
• Package and Mounting 60-ball TFBGA (10.0 mm × 12.5 mm) package optimized for compact board-level integration.
• Operating Temperature Commercial temperature rating: 0 °C to +70 °C (TA).

Typical Applications

• Embedded systems — Parallel DDR system memory for embedded platforms that require 512 Mbit DDR SDRAM in a compact FBGA footprint.
• Consumer electronics — Buffer and working memory in devices designed around a 2.5 V I/O memory interface and commercial temperature operation.
• Networking and communications — Packet buffers and temporary data storage where programmable burst lengths and concurrent bank operation improve throughput.
• Industrial control — Memory for control and buffering in equipment that operates within a 0 °C to 70 °C ambient range.

Unique Advantages

• Double-data-rate throughput: Internal pipelined DDR architecture provides two data transfers per clock cycle for higher effective bandwidth at a given clock frequency.
• Source-synchronous data capture: Bidirectional DQS with DLL alignment and differential clocks (CK/CK#) improves read/write timing margins.
• Byte-level control: Data mask (DM) and per-byte DQS in x16 configuration enable fine-grained write control and byte-oriented data handling.
• Flexible timing options: Programmable burst lengths (2/4/8) and documented speed-grade timing support adaptability across system timing requirements.
• Compact FBGA footprint: 60-ball (10 mm × 12.5 mm) package reduces board area while providing a standard BGA mounting option.
• Standard 2.5 V supply compatibility: Operates within a 2.3 V–2.7 V supply window (VDD/VDDQ ≈ +2.5 V ±0.2 V) for SSTL_2-compatible I/O environments.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V32M16FN-6:F combines a 512 Mbit density and 32M × 16 organization with DDR internal architecture and source-synchronous DQS to deliver practical, parallel DDR memory in a space-efficient 60-ball FBGA. Its documented timing (167 MHz clock rate for the -6 speed grade), programmable burst lengths, and four internal banks make it suitable for designs that need predictable DDR333-class memory behavior.

This device is a fit for designers targeting commercial-temperature systems operating at 2.5 V I/O levels who require compact board-level integration, byte-level write control, and industry-standard DDR features such as DLL alignment and differential clocking.

To request a quote or discuss availability and lead times for the MT46V32M16FN-6:F, please contact sales or submit a quote request describing your requirements.