MT46V32M16FN-75 IT:C TR

The MT46V32M16FN-75 IT:C TR is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a 32M × 16 memory organization and a parallel memory interface. It delivers defined timing and electrical characteristics for board-level memory subsystems.

Key device parameters include a 133 MHz clock frequency, 750 ps access time, 15 ns write cycle time (word/page), a 2.3 V–2.7 V supply range, operation from −40°C to 85°C (TA), and a 60-TFBGA (60-FBGA, 10×12.5) package for compact mounting.

Key Features

• Memory Architecture Organized as 32M × 16 providing a total density of 512 Mbit in DDR SDRAM format for parallel access.
• Performance 133 MHz clock frequency with a 750 ps access time to meet defined DDR timing requirements.
• Timing Write cycle time (word/page) specified at 15 ns for predictable write operations.
• Power Operates from 2.3 V to 2.7 V, supporting low-voltage DDR system designs.
• Package & Mounting Supplied in a 60-TFBGA (60-FBGA, 10×12.5) package for board-level mounting in space-constrained layouts.
• Temperature Range Rated for operation from −40°C to 85°C (TA) to support a wide range of ambient conditions.
• Interface Parallel memory interface suitable for integration into parallel DDR memory subsystems.

Typical Applications

• Parallel memory subsystems Use as 512 Mbit DDR SDRAM where parallel interface memory expansion is required on a PCB.
• Compact board designs The 60-FBGA (10×12.5) package supports high-density layouts and compact module implementations.
• Low-voltage DDR systems Operates within a 2.3 V–2.7 V supply range for systems designed around low-voltage DDR signaling.
• Temperature-tolerant deployments Suitable for systems operating across −40°C to 85°C ambient temperatures.

Unique Advantages

• High-density DRAM: 512 Mbit capacity in a 32M × 16 organization provides significant on-board volatile storage in a single device.
• Defined DDR timing: 133 MHz clock and 750 ps access time with 15 ns write cycle time enable consistent timing integration into DDR-based designs.
• Low-voltage operation: 2.3 V–2.7 V supply compatibility supports designs that target lower supply levels.
• Compact packaging: 60-TFBGA (60-FBGA, 10×12.5) minimizes board footprint while providing a high-density memory option.
• Broad operating range: −40°C to 85°C rating supports deployment in a wide range of ambient conditions.

Why Choose MT46V32M16FN-75 IT:C TR?

The MT46V32M16FN-75 IT:C TR offers a compact, board-level DDR SDRAM solution with clearly specified electrical and timing characteristics. Its 32M × 16 organization, 133 MHz clocking, and 750 ps access time make it suitable for designs that require a 512 Mbit parallel DDR memory device with predictable behavior.

With low-voltage operation (2.3 V–2.7 V), a small 60-FBGA package (10×12.5), and an operating temperature range of −40°C to 85°C, this device is appropriate for applications where space, defined timing, and ambient range are key integration constraints.

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