MT46V32M16FN-75 L:C

The MT46V32M16FN-75 L:C is a 512 Mbit DDR SDRAM organized as 32M × 16, supplied in a 60-FBGA package. It provides parallel DRAM memory with a specified clock frequency of 133 MHz and an access time of 750 ps.

Designed for systems that require on-board volatile memory with a compact ball-grid package, this device offers a defined timing and voltage operating range to support integration into parallel DDR memory subsystems.

Key Features

• Memory Core 512 Mbit DDR SDRAM organized as 32M × 16 for parallel memory architectures.
• Performance 133 MHz clock frequency with a 750 ps access time to support standard DDR timing requirements.
• Timing Write cycle time (word page) specified at 15 ns for predictable write behavior.
• Power Operates from a 2.3 V to 2.7 V supply range, allowing designs targeting this DDR supply window.
• Package 60-TFBGA / 60-FBGA (10 × 12.5 mm) compact footprint suitable for space-constrained PCBs.
• Operating Temperature Specified for 0°C to 70°C (TA) ambient operation.
• Interface Parallel DRAM interface compatible with DDR signaling conventions.

Typical Applications

• Parallel DDR memory subsystems Use as a 512 Mbit parallel DDR device in systems requiring 32M × 16 memory organization.
• On-board volatile working memory Provide runtime data storage and buffering in embedded systems and digital modules.
• Compact PCB designs Small 60-FBGA package enables integration where board space is limited.

Unique Advantages

• Defined density and organization: 512 Mbit capacity organized as 32M × 16 simplifies memory mapping and addressing in designs.
• DDR performance at 133 MHz: Clock frequency and 750 ps access time support predictable read/write timing for parallel DDR implementations.
• Compact BGA package: 60-FBGA (10 × 12.5 mm) offers a small footprint for space-constrained assemblies.
• Controlled write timing: 15 ns write cycle time (word page) gives clear parameters for write operations and timing budgets.
• Specified operating range: 0°C to 70°C ambient rating and 2.3 V–2.7 V supply range enable straightforward system-level thermal and power planning.

Why Choose MT46V32M16FN-75 L:C?

The MT46V32M16FN-75 L:C positions itself as a straightforward DDR SDRAM component offering a 512 Mbit density with defined timing and power characteristics in a compact 60-FBGA package. Its specification set—32M × 16 organization, 133 MHz clock, 750 ps access time, and 15 ns write cycle time—makes it suitable for designs that require a deterministic parallel DDR memory element with a small PCB footprint.

Engineers and purchasers seeking a Micron Technology Inc. DDR memory device with clear electrical and timing parameters will find this part appropriate for applications that match its specified voltage, temperature, and package constraints, supporting reliable integration into parallel memory subsystems.

If you would like pricing or availability information, request a quote or submit an inquiry to obtain a formal quote for MT46V32M16FN-75 L:C.