MT46V32M16P-5B XIT:J

The MT46V32M16P-5B XIT:J is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It implements a double-data-rate architecture with internal pipelined operation and four internal banks for concurrent access.

Designed for systems that require a compact, industrial-temperature DDR memory device, this part delivers 200 MHz clock operation, a 2.5V–2.7V supply window, and a 66-pin TSOP package for board-level integration.

Key Features

• DDR SDRAM Core Internal, pipelined double-data-rate architecture providing two data transfers per clock cycle and a DLL to align DQ/DQS with CK.
• Memory Organization 512 Mbit capacity organized as 32M × 16 with four internal banks to support concurrent operations.
• Performance / Timing Speed grade -5B: 5 ns cycle time at CL = 3 (supports up to 200 MHz clock rate); access time specified at 700 ps and programmable burst lengths of 2, 4, or 8.
• Data Integrity and Transfer Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; DQS is edge-aligned for READs and center-aligned for WRITEs. Provides data mask (DM) functionality (two DMs on x16, one per byte).
• Interface and Clocking Differential clock inputs (CK, CK#) with commands entered on each positive CK edge and support for concurrent auto precharge.
• Power 2.5 V–2.7 V supply range (VDD/VDDQ). Device supports SSTL_2-compatible 2.5 V I/O signaling.
• Package 66-pin TSSOP (0.400", 10.16 mm width) package for PCB mounting and improved lead reliability options noted in the datasheet.
• Operating Temperature Rated for −40°C to +85°C (TA), suitable for designs requiring extended ambient temperature range.
• Refresh and Reliability Auto refresh and self-refresh options with typical 8K refresh cycles as documented for the device family.

Typical Applications

• Embedded memory expansion — Provides 512 Mbit DDR storage for systems that require external volatile memory in a parallel DDR interface.
• Industrial controllers — Industrial-temperature rating (−40°C to +85°C) supports equipment operating across extended ambient conditions.
• Legacy DDR memory designs — Fits applications that use a 66-TSSOP footprint and parallel DDR signaling with SSTL_2-compatible I/O.

Unique Advantages

• DDR bandwidth with compact footprint: Double-data-rate operation at up to 200 MHz clock in a 66-TSSOP package enables higher throughput without large BGA footprints.
• Byte-level control: x16 organization with dual data masks and two DQS strobes (one per byte) simplifies byte-oriented write masking and timing alignment.
• Flexible burst lengths: Programmable burst lengths (2, 4, 8) allow tuning memory transfers for different access patterns and controller implementations.
• Industrial-temperature rating: Specified operation from −40°C to +85°C supports deployment in temperature-challenged environments.
• SSTL_2-compatible I/O: 2.5 V I/O signaling and defined VDD/VDDQ ranges simplify interface design with existing SSTL_2 memory controllers.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16P-5B XIT:J positions itself as a practical DDR SDRAM option for designs that need 512 Mbit of volatile memory in a parallel x16 configuration, delivering DDR throughput at a 200 MHz clock rate and timing consistent with the -5B speed grade. Its 66-TSSOP package and industrial temperature rating make it suitable for board-level integration where space and ambient-range requirements are factors.

This device is appropriate for engineers building systems that require predictable DDR timing (including DQS-based source-synchronous capture), byte-level write masking, and programmable burst behavior—providing a clear, spec-driven choice for compatible memory controller implementations.

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