MT46V32M16P-5B:F

IC DRAM 512MBIT PARALLEL 66TSOP
Part Description

IC DRAM 512MBIT PARALLEL 66TSOP

Quantity 243 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16P-5B:F – IC DRAM 512MBIT PARALLEL 66TSOP

The MT46V32M16P-5B:F is a 512 Mbit DDR SDRAM organized as 32M × 16 in a 66‑pin TSSOP package. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture and is designed for systems that require parallel DDR memory in a commercial temperature range.

This device targets designs that need a 512 Mbit volatile DRAM component with up to 200 MHz clock capability, standardized 2.5 V I/O signaling, and features such as programmable burst lengths, internal DLL, and multiple internal banks for concurrent operation.

Key Features

  • Memory Type & Organization  512 Mbit DDR SDRAM organized as 32M × 16 with four internal banks for concurrent operation.
  • DDR Architecture  Internal, pipelined DDR architecture providing two data accesses per clock cycle; bidirectional data strobe (DQS) transmitted/received with data. x16 devices include two DQS lines (one per byte).
  • Clocking & Timing  Supports a clock frequency up to 200 MHz (speed grade -5B) with an access time of 700 ps and timing options defined for CL = 2, 2.5, or 3.
  • Data Handling  DQS edge‑aligned for READs and center‑aligned for WRITEs, with data mask (DM) support (x16 has two masks, one per byte) and programmable burst lengths of 2, 4, or 8.
  • Voltage & I/O  VDD/VDDQ nominal 2.5 V range (datasheet lists VDD = +2.5V ±0.2V and 2.6V ±0.1V options); 2.5 V I/O (SSTL_2 compatible).
  • Refresh & Power Management  Supports auto refresh (8K refresh count) and self refresh options as described in the device family documentation.
  • Package & Temperature  66‑TSSOP (0.400", 10.16 mm width) plastic package and commercial operating temperature 0 °C to +70 °C (TA).
  • Interface & Compatibility  Parallel memory interface with differential clock inputs (CK/CK#) and DLL to align DQ/DQS with CK for reliable timing margins.
  • Write Cycle  Word page write cycle time specified at 15 ns for fast write operations.

Typical Applications

  • System Memory for Embedded Platforms  Use as parallel DDR memory in embedded designs requiring 512 Mbit volatile storage and standard 2.5 V interfaces.
  • Networking and Telecom Modules  Integration in modules that need pipelined DDR transfers and programmable burst lengths to match packet buffering needs.
  • Consumer and Commercial Electronics  Suitable for commercial‑temperature consumer devices that require compact 66‑TSSOP packaged DDR memory with standard refresh support.

Unique Advantages

  • Two data transfers per clock cycle:  Internal DDR pipelined architecture enables two accesses per clock, increasing throughput at the specified clock rate.
  • Byte‑level timing control:  DQS per byte (x16 has two DQS) and DM per byte provide precise alignment and selective write masking for robust data integrity.
  • Flexible timing options:  Supports CL = 2, 2.5, or 3 and a defined -5B speed grade that includes a 200 MHz clock rate for higher‑speed applications.
  • Standardized 2.5 V signaling:  VDD/VDDQ nominal 2.5 V operation and SSTL_2 compatible I/O simplify interfacing with common system logic levels.
  • Compact TSOP footprint:  66‑TSSOP package provides a space‑efficient form factor for board designs constrained by area but requiring parallel DDR memory.
  • Commercial temperature rating:  Specified operating range of 0 °C to +70 °C for applications within commercial environmental limits.

Why Choose MT46V32M16P-5B:F?

The MT46V32M16P-5B:F combines a 512 Mbit DDR architecture with a compact 66‑TSSOP package and standard 2.5 V I/O, delivering a reliable parallel DRAM option for commercial‑temperature system designs. Its internal DLL, DQS timing features, and programmable burst lengths provide the timing control and throughput flexibility necessary for embedded, networking, and consumer modules that require deterministic DDR behavior.

This device is appropriate for designers seeking a verified 32M × 16 DDR SDRAM component with defined timing grades and refresh behavior, enabling predictable system integration and long‑term inventory planning within commercial environments.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT46V32M16P-5B:F.

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