MT46V32M16P-6T L IT:F

The MT46V32M16P-6T L IT:F is a 512 Mbit DDR SDRAM organized as 32M x 16 with a parallel memory interface. It implements an internal pipelined Double Data Rate (DDR) architecture with two data accesses per clock cycle and is supplied in a 66-pin TSSOP package.

Designed for systems that require a 512 Mbit parallel DDR memory device, the part provides industry-standard DDR features such as bidirectional data strobe (DQS), differential clock inputs, and programmable burst lengths for predictable memory timing and system integration.

Key Features

• Memory Type and Organization — 512 Mbit DRAM organized as 32M x 16 with four internal banks for concurrent operation.
• DDR Architecture — Internal pipelined double-data-rate (DDR) design enabling two data transfers per clock cycle; DQS is transmitted/received with data for source-synchronous capture.
• Clock and Timing — Clock frequency up to 167 MHz (device timing grade -6T), access window and DQS-DQ alignment options per datasheet timing tables; typical access time listed as 700 ps.
• Voltage and I/O — Supply range 2.3 V to 2.7 V (VDD/VDDQ nominal +2.5 V ±0.2 V); 2.5 V I/O signaling (SSTL_2 compatible) described in datasheet.
• Data Integrity and Control — Differential clock inputs (CK/CK#), DLL for aligning DQ/DQS with CK, and data mask (DM) support (x16 has two DM signals, one per byte) for masked writes.
• Burst and Refresh — Programmable burst lengths of 2, 4, or 8 and auto-refresh support with 8,192 refresh cycles per 64 ms interval.
• Package and Thermal — 66-TSSOP (0.400", 10.16 mm width) package with a longer-lead TSOP option for improved reliability; industrial temperature rating of –40°C to +85°C (TA).
• Write and Cycle Timing — Write cycle time (word page) specified at 15 ns in the product data.

Typical Applications

• Embedded memory subsystems — Provides 512 Mbit parallel DDR storage for systems requiring x16 memory organization and standard DDR features.
• Board-level DRAM expansion — Used where a 66-pin TSOP packaged DDR device is needed to increase system memory capacity while maintaining industry-standard DDR interfaces.
• Industrial systems — Suited to applications operating across an industrial temperature range (–40°C to +85°C) that require DDR memory with auto-refresh and programmable burst lengths.

Unique Advantages

• Double Data Rate transfers: Two data accesses per clock cycle via internal pipelined DDR architecture enhances effective data throughput at a given clock rate.
• Byte-level control (x16): Two data mask (DM) signals on the x16 device enable byte masking during writes for finer-grain data control.
• Robust timing features: DLL alignment of DQ/DQS and differential clock inputs provide deterministic timing behavior for source-synchronous capture.
• Industrial temperature rating: –40°C to +85°C operation supports designs targeted at industrial environments.
• Package reliability: Longer-lead TSOP option (OCPL) cited in the datasheet for improved mechanical reliability in board assembly.
• Standard DDR refresh and burst modes: Auto-refresh (8192 cycles per 64 ms) and programmable burst lengths (2, 4, 8) simplify memory management in a variety of system designs.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16P-6T L IT:F delivers a standardized 512 Mbit DDR SDRAM solution with explicit timing, voltage, and interface characteristics suitable for designs requiring a parallel x16 DDR memory in a 66-TSSOP footprint. Its DDR architecture, DQS/DLL timing support, and programmable burst/refresh options provide predictable integration for memory subsystems.

With a supply voltage range centered on 2.5 V, industrial temperature rating, and package options that emphasize assembly reliability, this device fits applications that need stable DDR behavior and board-level compatibility in commercial and industrial environments.

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