MT46V32M16P-5B:C

The MT46V32M16P-5B:C is a 512 Mbit parallel DRAM device implemented as DDR SDRAM with a 32M × 16 organization. It provides a 200 MHz clock frequency and is targeted at systems that require parallel DDR memory with defined timing and power characteristics.

Packaged in a 66‑TSSOP (0.400", 10.16 mm width) and specified for an ambient operating range of 0°C to 70°C, the device is suitable for designs where compact footprint, known voltage range, and standard DRAM interface are required.

Key Features

• Memory Core DDR SDRAM architecture with a memory organization of 32M × 16 delivering a total memory size of 512 Mbit.
• Performance 200 MHz clock frequency and 700 ps access time for timing-driven applications; write cycle time (word page) specified at 15 ns.
• Interface Parallel memory interface supporting standard DRAM signal topology for integration into parallel-memory systems.
• Power Operates from a 2.5 V to 2.7 V supply range.
• Package 66‑TSSOP package (0.400", 10.16 mm width) suitable for compact board-level integration and surface-mount assembly.
• Environmental Specified operating temperature range of 0°C to 70°C (TA).

Typical Applications

• Memory subsystems — Used as parallel DDR system memory where 512 Mbit density and 32M × 16 organization meet capacity and bus-width requirements.
• Embedded systems — Integration into board-level designs requiring a compact 66‑TSSOP package and a defined 2.5–2.7 V supply.
• Networking and communications equipment — Provides on-board DRAM for buffering and temporary storage in systems that use parallel DDR memory interfaces.
• Industrial controllers — Suitable for control and processing modules operating within the specified 0°C to 70°C ambient range.

Unique Advantages

• 512 Mbit density in a compact package: 32M × 16 organization delivers substantial memory capacity while retaining a 66‑TSSOP footprint.
• DDR SDRAM timing: 200 MHz clock and 700 ps access time provide defined performance characteristics for timing-sensitive designs.
• Standard parallel interface: Parallel DRAM interface simplifies integration into existing parallel-memory architectures.
• Known supply range: 2.5 V–2.7 V operation aligns with common legacy DRAM power rails.
• Board-level integration: Surface-mount 66‑TSSOP package supports compact PCB layouts and standard assembly processes.
• Specified operating range: 0°C to 70°C ambient rating for use in temperature-controlled commercial and industrial environments.

Why Choose MT46V32M16P-5B:C?

The MT46V32M16P-5B:C from Micron Technology Inc. positions itself as a compact, parallel DDR SDRAM solution offering 512 Mbit capacity, a 32M × 16 organization, and defined timing (200 MHz clock, 700 ps access time). Its 66‑TSSOP package and 2.5–2.7 V supply make it suitable for board-level designs that require a balance of density and form factor.

This device is suited for engineers designing systems that rely on parallel DRAM memory interfaces and need clearly specified electrical and timing parameters. Its combination of capacity, package, and operating specifications supports predictable integration into a range of commercial and industrial applications.

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