MT46V16M16P-5B AIT:M TR

IC DRAM 256MBIT PARALLEL 66TSOP
Part Description

IC DRAM 256MBIT PARALLEL 66TSOP

Quantity 827 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeAutomotive
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q101ECCNEAR99HTS Code8542.32.0036

Overview of MT46V16M16P-5B AIT:M TR – IC DRAM 256MBIT PARALLEL 66TSOP

The MT46V16M16P-5B AIT:M TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It implements an internal pipelined double-data-rate architecture with differential clock inputs and source-synchronous data capture to support synchronous, high-rate memory access.

Designed for industrial/automotive-oriented systems, the device offers AEC-rated qualification references and a compact 66-TSSOP package, providing a balance of performance, reliability, and form-factor for embedded and control applications that require on-board DDR memory.

Key Features

  • Core / Architecture Internal, pipelined double-data-rate (DDR) design with DLL, differential clock inputs (CK/CK#), and commands entered on positive CK edge.
  • Memory 256 Mbit capacity organized as 16M × 16 with four internal banks for concurrent operation and data mask (DM) support (two DM for x16, one per byte).
  • Data Capture Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; DQS edge-aligned for READs and center-aligned for WRITES.
  • Timing -5B timing grade supports up to 200 MHz clock rate (CL = 3) with documented data-out and access windows; programmable burst lengths of 2, 4, or 8.
  • Power / I/O Supply range specified at 2.3 V to 2.7 V; device supports 2.5 V I/O compatible signaling as listed in product data.
  • Refresh & Self-Management Auto refresh and self-refresh (self-refresh availability depends on device option); 8K refresh cycle support noted in product data.
  • Package 66-pin TSSOP (0.400", 10.16 mm width) with longer-lead TSOP option noted for improved reliability.
  • Qualification & Reliability AEC-rated references appear in product data (AEC-Q100 noted in datasheet features and AEC-Q101 shown in specifications); PPAP submission and 8D response capabilities are documented.
  • Temperature Range Operating temperature range for the AIT marking is –40°C to +85°C as specified in the part identification.

Typical Applications

  • Automotive systems Suitable for systems that reference automotive DDR SDRAM in product documentation and require AEC-rated memory components and industrial temperature operation.
  • Industrial control Embedded control and instrumentation designs that require a compact parallel DDR memory with –40°C to +85°C operating range.
  • Embedded memory expansion On-board DRAM for embedded devices that need a 256 Mbit DDR memory in a 66-TSSOP package.

Unique Advantages

  • AEC-rated references: Product data lists AEC-related qualifications and documentation (AEC-Q100 and AEC-Q101 appear in the provided specifications), supporting use in regulated applications.
  • Industrial temperature option: The AIT marking corresponds to an operating range of –40°C to +85°C, enabling use across a wide temperature range.
  • Compact TSOP package: 66-TSSOP (10.16 mm width) provides a small footprint with longer-lead TSOP noted for improved reliability in the product documentation.
  • DDR architecture with DQS: Source-synchronous DQS (two strobes on x16) and DLL alignment improve timing margin for read/write data capture as described in the datasheet content.
  • Flexible timing options: Programmable burst lengths (2, 4, 8) and documented timing grades (–5B shown at up to 200 MHz) allow designers to match memory timing to system needs.
  • Documented manufacturing support: PPAP submission and 8D response capability are listed in the product documentation for production and quality processes.

Why Choose MT46V16M16P-5B AIT:M TR?

The MT46V16M16P-5B AIT:M TR combines a 256 Mbit DDR SDRAM architecture with industrial temperature operation and AEC-related qualification references from the product data, making it suitable for designs that require documented reliability and DDR performance in a compact TSOP package. Its x16 organization, source-synchronous DQS, and programmable burst options provide deterministic timing choices for embedded memory subsystems.

Engineers specifying this part benefit from explicit timing and electrical parameters in the product documentation, a reduced board-space footprint with the 66-TSSOP, and manufacturing support notes included in the datasheet material.

Request a quote or submit a pricing and availability inquiry for the MT46V16M16P-5B AIT:M TR to obtain lead-time and ordering information.

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