MT46V16M16P-5B AIT:M TR
| Part Description |
IC DRAM 256MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 827 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Automotive | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q101 | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT46V16M16P-5B AIT:M TR – IC DRAM 256MBIT PARALLEL 66TSOP
The MT46V16M16P-5B AIT:M TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It implements an internal pipelined double-data-rate architecture with differential clock inputs and source-synchronous data capture to support synchronous, high-rate memory access.
Designed for industrial/automotive-oriented systems, the device offers AEC-rated qualification references and a compact 66-TSSOP package, providing a balance of performance, reliability, and form-factor for embedded and control applications that require on-board DDR memory.
Key Features
- Core / Architecture Internal, pipelined double-data-rate (DDR) design with DLL, differential clock inputs (CK/CK#), and commands entered on positive CK edge.
- Memory 256 Mbit capacity organized as 16M × 16 with four internal banks for concurrent operation and data mask (DM) support (two DM for x16, one per byte).
- Data Capture Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; DQS edge-aligned for READs and center-aligned for WRITES.
- Timing -5B timing grade supports up to 200 MHz clock rate (CL = 3) with documented data-out and access windows; programmable burst lengths of 2, 4, or 8.
- Power / I/O Supply range specified at 2.3 V to 2.7 V; device supports 2.5 V I/O compatible signaling as listed in product data.
- Refresh & Self-Management Auto refresh and self-refresh (self-refresh availability depends on device option); 8K refresh cycle support noted in product data.
- Package 66-pin TSSOP (0.400", 10.16 mm width) with longer-lead TSOP option noted for improved reliability.
- Qualification & Reliability AEC-rated references appear in product data (AEC-Q100 noted in datasheet features and AEC-Q101 shown in specifications); PPAP submission and 8D response capabilities are documented.
- Temperature Range Operating temperature range for the AIT marking is –40°C to +85°C as specified in the part identification.
Typical Applications
- Automotive systems Suitable for systems that reference automotive DDR SDRAM in product documentation and require AEC-rated memory components and industrial temperature operation.
- Industrial control Embedded control and instrumentation designs that require a compact parallel DDR memory with –40°C to +85°C operating range.
- Embedded memory expansion On-board DRAM for embedded devices that need a 256 Mbit DDR memory in a 66-TSSOP package.
Unique Advantages
- AEC-rated references: Product data lists AEC-related qualifications and documentation (AEC-Q100 and AEC-Q101 appear in the provided specifications), supporting use in regulated applications.
- Industrial temperature option: The AIT marking corresponds to an operating range of –40°C to +85°C, enabling use across a wide temperature range.
- Compact TSOP package: 66-TSSOP (10.16 mm width) provides a small footprint with longer-lead TSOP noted for improved reliability in the product documentation.
- DDR architecture with DQS: Source-synchronous DQS (two strobes on x16) and DLL alignment improve timing margin for read/write data capture as described in the datasheet content.
- Flexible timing options: Programmable burst lengths (2, 4, 8) and documented timing grades (–5B shown at up to 200 MHz) allow designers to match memory timing to system needs.
- Documented manufacturing support: PPAP submission and 8D response capability are listed in the product documentation for production and quality processes.
Why Choose MT46V16M16P-5B AIT:M TR?
The MT46V16M16P-5B AIT:M TR combines a 256 Mbit DDR SDRAM architecture with industrial temperature operation and AEC-related qualification references from the product data, making it suitable for designs that require documented reliability and DDR performance in a compact TSOP package. Its x16 organization, source-synchronous DQS, and programmable burst options provide deterministic timing choices for embedded memory subsystems.
Engineers specifying this part benefit from explicit timing and electrical parameters in the product documentation, a reduced board-space footprint with the 66-TSSOP, and manufacturing support notes included in the datasheet material.
Request a quote or submit a pricing and availability inquiry for the MT46V16M16P-5B AIT:M TR to obtain lead-time and ordering information.