MT46V16M16P-5B AIT:M

The MT46V16M16P-5B AIT:M is a 256 Mbit DDR SDRAM device in a parallel x16 configuration (16M × 16). It implements an internal pipelined double-data-rate architecture with source-synchronous data capture and differential clock inputs for high-throughput, low-latency memory access.

Designed for industrial and automotive-aware applications, the device combines a 66‑TSSOP package, AEC‑Q100 qualification, and an extended operating range to deliver robust DDR performance where temperature and reliability matter.

Key Features

• Core / Architecture Internal pipelined DDR architecture supporting two data transfers per clock cycle and a DLL to align DQ/DQS transitions with CK.
• Memory Organization 256 Mbit capacity organized as 16M × 16 with four internal banks (4 banks) for concurrent operation.
• Performance 200 MHz clock frequency (speed grade -5B) with an access time of 700 ps and a write cycle time (word/page) of 15 ns.
• Data I/O and Timing Bidirectional data strobe (DQS) transmitted/received with data (x16 devices provide two DQS signals, one per byte); programmable burst lengths BL = 2, 4 or 8; DQS edge-aligned for READs and center-aligned for WRITEs.
• Power / Voltage 2.3 V to 2.7 V supply range (nominal DDR VDD/VDDQ ~2.5 V depending on operating conditions).
• Refresh and Reliability Auto-refresh supported with 8K refresh cycles; AEC‑Q100 qualification and PPAP submission noted in product documentation.
• Package 66‑TSSOP (0.400", 10.16 mm width) plastic package option for board-level mounting and compact system integration.
• Temperature Range Specified operating temperature range of −40 °C to +85 °C (TA) for the AIT (industrial) temperature grade.

Typical Applications

• Automotive electronic modules — Memory buffering and transient storage in modules where AEC‑Q100 qualification and industrial temperature rating are required.
• Industrial control systems — High-speed parallel DDR memory for real-time buffering and temporary storage in harsh temperature environments.
• Embedded systems with parallel interfaces — Local DRAM for processors or controllers requiring x16 parallel DDR data paths and programmable burst lengths.

Unique Advantages

• AEC‑Q100 qualified: Provided qualification supports use in designs with established automotive/industrial reliability processes.
• Source‑synchronous DDR interface: Bidirectional DQS and differential clocks improve timing margin for high-rate data transfer and easier system timing closure.
• Compact 66‑TSSOP package: Narrow 0.400" (10.16 mm) TSOP footprint enables denser board layouts while retaining robust leaded package characteristics.
• Flexible timing and burst control: Programmable burst lengths (2, 4, 8) and four internal banks provide application-level flexibility for varied access patterns.
• Extended operating range: Rated for −40 °C to +85 °C (AIT) to meet industrial temperature requirements.

Why Choose MT46V16M16P-5B AIT:M?

The MT46V16M16P-5B AIT:M positions itself as a 256 Mbit DDR SDRAM solution that combines DDR performance primitives—source-synchronous DQS, DLL alignment, and programmable burst lengths—with package and qualification choices suited for temperature-sensitive designs. Its 16‑bit parallel organization and 66‑TSSOP package make it appropriate for systems that need compact, board-level DDR memory with defined timing characteristics.

This device is well suited to engineers developing industrial and automotive-grade electronics who require verified timing behavior, AEC‑Q100 qualification, and a 2.3–2.7 V DDR power profile for integration into established memory subsystems.

If you would like pricing information, availability, or to request a formal quote for MT46V16M16P-5B AIT:M, please submit a request or contact sales for assistance.