MT46V16M16FG-5B:F TR

IC DRAM 256MBIT PARALLEL 60FBGA
Part Description

IC DRAM 256MBIT PARALLEL 60FBGA

Quantity 110 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x14)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-FBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V16M16FG-5B:F TR – IC DRAM 256MBIT PARALLEL 60FBGA

The MT46V16M16FG-5B:F TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 60-ball FBGA (8 × 14 mm) package. It implements a double-data-rate internal pipelined architecture with two data accesses per clock cycle and is targeted at systems that require commodity parallel DDR memory for board-level integration.

This device operates at a 200 MHz clock frequency (speed grade -5B), supports VDD/VDDQ in the 2.5 V to 2.7 V range, and is specified for commercial temperature operation from 0 °C to 70 °C.

Key Features

  • Core architecture  Internal pipelined DDR architecture providing two data transfers per clock cycle and a DLL to align DQ/DQS transitions with CK.
  • Memory organization  256 Mbit capacity arranged as 16M × 16 with four internal banks for concurrent operation.
  • Performance / Timing  Rated for a 200 MHz clock (speed grade -5B) with an access time of 700 ps and a word-page write cycle time of 15 ns. Table timing for -5B includes a data-out window of 1.6 ns and DQS‑DQ skew of +0.40 ns.
  • Interface  Parallel DDR interface with bidirectional data strobe (DQS) transmitted/received with data and differential clock inputs (CK/CK#).
  • Power  VDD and VDDQ supported at +2.5 V ±0.2 V (also noted for DDR400 variant VDD = +2.6 V ±0.1 V in datasheet options); I/O compatible with 2.5 V (SSTL_2-compatible).
  • Programmability and refresh  Supports programmable burst lengths (2, 4, or 8), auto-refresh (8K refresh cycles), and self-refresh options as documented in the datasheet.
  • Package and mounting  60-ball FBGA package (8 mm × 14 mm) optimized for board mounting in compact system designs.
  • Operating conditions  Commercial temperature rating: 0 °C to +70 °C as specified in the product data.

Typical Applications

  • Embedded systems  Provides parallel DDR memory for embedded control and processing modules that require discrete DRAM integration.
  • Consumer electronics  Suitable for consumer devices that need off-chip parallel DDR memory in a compact FBGA footprint.
  • Networking and communications modules  Supports buffering and temporary data storage in board-level network interface and communication modules using a parallel DDR interface.

Unique Advantages

  • DDR internal architecture: Enables two data accesses per clock cycle, increasing effective data throughput versus single-data-rate DRAM.
  • Byte-aligned strobes: Bidirectional DQS (two DQS signals for x16) provides source-synchronous data capture and improved timing alignment.
  • Compact FBGA package: 60-ball FBGA (8×14 mm) offers a small board footprint for dense system layouts.
  • Verified timing grade -5B: Rated at 200 MHz with specified data-out and access windows, allowing predictable timing design trade-offs.
  • Standard supply voltages: Operates on industry-standard 2.5 V I/O and VDD/VDDQ ranges, simplifying power-rail design.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT46V16M16FG-5B:F TR is a straightforward, board-mount DDR SDRAM device delivering 256 Mbit of parallel memory in a 60-ball FBGA package. Its DDR architecture, defined timing for the -5B speed grade, and standard 2.5 V supply make it suitable for designers seeking predictable, parallel DDR memory behavior and a compact package footprint.

This device is appropriate for commercial-temperature applications that require discrete DDR memory capacity, deterministic timing parameters, and commonly used supply voltages. It is manufactured by Micron Technology Inc. and documented in the provided product datasheet for design integration and verification.

Request a quote or submit an inquiry to get pricing and availability for MT46V16M16FG-5B:F TR for your next design.

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