MT46V16M16CY-5B:M

The MT46V16M16CY-5B:M is a 256 Mbit parallel DDR SDRAM device from Micron Technology Inc. It is organized as 16M × 16 and implements DDR SDRAM architecture for system memory applications that require parallel access.

Designed for board-level integration, the device delivers a 200 MHz clock rate with a 700 ps access time and operates from a 2.5 V to 2.7 V supply. The part is supplied in a 60-ball TFBGA/FBGA package suitable for compact system designs and operates over a 0 °C to 70 °C ambient range.

Key Features

• Memory Core 256 Mbit DRAM organized as 16M × 16, implemented as DDR SDRAM.
• Performance Supports a 200 MHz clock frequency with a specified access time of 700 ps for responsive memory access.
• Timing Write cycle time (word/page) specified at 15 ns for predictable write-side timing.
• Power Operates from a 2.5 V to 2.7 V supply range, providing compatibility with systems designed around this DDR supply window.
• Package Available in a 60-ball thin flat ball grid array (60-TFBGA) / 60-FBGA package with 8 × 12.5 mm supplier package dimensions.
• Operating Range Rated for ambient operation from 0 °C to 70 °C (TA).

Typical Applications

• Systems requiring 256 Mbit parallel DDR memory — Integrates as the primary DDR memory element where a 16M × 16 organization is required.
• Designs targeting 200 MHz DDR operation — Suitable where a 200 MHz clock and 700 ps access time meet system performance needs.
• Board-level implementations with compact BGA footprints — The 60-TFBGA / 60-FBGA (8 × 12.5 mm) package supports space-constrained PCB layouts.

Unique Advantages

• Standard DDR architecture — Delivers a familiar DDR SDRAM interface and organization (16M × 16) for straightforward integration into parallel-memory designs.
• Measurable performance metrics — 200 MHz clock frequency and 700 ps access time provide concrete timing figures for system budgeting and validation.
• Predictable write timing — 15 ns write cycle time (word/page) simplifies write-side timing analysis.
• Compact BGA packaging — 60-TFBGA / 60-FBGA package (8 × 12.5 mm) minimizes board area while maintaining ball-grid connectivity.
• <strong-Wide supply tolerance — Operates across a 2.5 V to 2.7 V range to match typical DDR supply domains.
• Specified operating temperature — Rated for 0 °C to 70 °C ambient operation for standard temperature environments.

Why Choose MT46V16M16CY-5B:M?

The MT46V16M16CY-5B:M combines a 256 Mbit DDR SDRAM organization with defined timing and power characteristics to support parallel-memory designs that require clear performance and integration parameters. Its 200 MHz clock capability, 700 ps access time, and 15 ns write cycle time provide quantifiable metrics for system designers to plan memory timing and throughput.

Packaged in a 60-ball TFBGA/FBGA footprint and supported by a 2.5 V–2.7 V supply window, this Micron device fits applications where compact board-level memory and predictable electrical characteristics are required. It is suitable for projects that operate within the specified 0 °C to 70 °C ambient range and need a 16M × 16 DDR memory element.

If you would like pricing, availability, or a formal quote for MT46V16M16CY-5B:M, please request a quote or contact sales to discuss your requirements.