MT46V16M16CY-6 IT:K TR
| Part Description |
IC DRAM 256MBIT PAR 60FBGA |
|---|---|
| Quantity | 507 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V16M16CY-6 IT:K TR – IC DRAM 256MBIT PAR 60FBGA
The MT46V16M16CY-6 IT:K TR is a 256 Mbit DDR SDRAM device organized as 16M × 16 with a parallel memory interface. It implements synchronous DRAM architecture and is supplied in a 60-ball FBGA package.
This device addresses designs that require on-board parallel DDR memory with defined timing and electrical characteristics, including a 167 MHz clock frequency, 700 ps access time, and a supply voltage range of 2.3 V to 2.7 V.
Key Features
- Memory Core 256 Mbit DDR SDRAM organized as 16M × 16, provided as volatile DRAM storage for system memory expansion.
- Interface Parallel memory interface compatible with synchronous DDR operation.
- Performance Clock frequency of 167 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns, providing defined timing for memory subsystem design.
- Power Operates from a 2.3 V to 2.7 V supply range to match system power rails.
- Package 60-TFBGA package (supplier device package: 60-FBGA (8 × 12.5)) for board-mounted applications where a ball-grid array is required.
- Temperature Range Specified operating ambient temperature range of −40°C to 85°C (TA).
Typical Applications
- Parallel DDR memory subsystems — Provides 256 Mbit of synchronous DRAM in designs requiring a parallel DDR interface and 16M × 16 organization.
- Embedded memory expansion — Used where defined DDR timing (167 MHz, 700 ps access time) and a compact FBGA package are required on the PCB.
- Industrial temperature environments — Suitable for systems operating within an ambient range of −40°C to 85°C.
Unique Advantages
- Parallel DDR interface: Enables integration into designs that require a parallel synchronous DRAM connection.
- Defined timing performance: 167 MHz clock frequency, 700 ps access time, and 15 ns write cycle time provide clear timing parameters for memory subsystem design and validation.
- Flexible power range: Operates from 2.3 V to 2.7 V to align with system power requirements.
- Compact FBGA footprint: 60-TFBGA (60-FBGA (8 × 12.5)) package supports high-density PCB layouts.
- Wide operating temperature: −40°C to 85°C rating supports use in temperature-varied environments.
Why Choose MT46V16M16CY-6 IT:K TR?
The MT46V16M16CY-6 IT:K TR is positioned for designs that require a 256 Mbit parallel DDR SDRAM with defined timing, a compact FBGA package, and a moderate supply voltage range. Its specified clock frequency, access time, and write cycle timing make it suitable for memory subsystems where deterministic DDR timing is needed.
Manufactured by Micron Technology Inc., this device is appropriate for engineers specifying on-board volatile memory in systems that must meet the listed electrical and environmental parameters.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT46V16M16CY-6 IT:K TR.
