MT46V16M16CY-5B AIT:M TR

The MT46V16M16CY-5B AIT:M TR is a 256 Mbit DDR SDRAM device organized as 16M × 16 with a parallel memory interface in a 60-ball FBGA package. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture and differential clock inputs for synchronous DDR operation.

Designed for designs requiring compact, qualified DDR memory, the device provides automotive-grade qualification and industrial temperature range support, offering deterministic timing features and standard DDR functionality such as programmable burst lengths, auto refresh and self refresh (variant dependent).

Key Features

• Core Architecture Internal pipelined DDR architecture enabling two data accesses per clock cycle and a DLL to align DQ and DQS transitions with the clock.
• Memory Organization 256 Mbit capacity arranged as 16M × 16 with four internal banks for concurrent operation.
• Performance & Timing 200 MHz clock frequency (–5B grade) with an access window and data-out timing appropriate for CL = 3 operation; access time listed as 700 ps and write cycle time (word page) of 15 ns.
• Data Timing and I/O Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture (x16 has two DQS signals, one per byte). Differential clock inputs (CK/CK#) and data mask (DM) support (x16 has two DMs, one per byte).
• Programmable Operation Programmable burst lengths of 2, 4, or 8 and support for concurrent auto precharge and auto refresh (8192-cycle refresh counts as specified).
• Power Supply voltage range 2.3 V to 2.7 V; I/O signaling compatible with 2.5 V I/O levels as documented.
• Package & Mounting 60-ball thin FBGA package (8 mm × 12.5 mm) for compact board footprint and surface-mount assembly.
• Temperature & Qualification Operating temperature range –40 °C to +85 °C (TA) with AEC-Q100 qualification and automotive-oriented documentation (PPAP submission and 8D response noted).

Typical Applications

• Automotive control modules — Automotive-qualified DDR memory for embedded controllers and modules requiring AEC-Q100 qualification and extended temperature range.
• Industrial embedded systems — Compact DDR memory for industrial electronics operating from –40 °C to +85 °C where deterministic DDR timing is required.
• Compact system memory expansion — Space-constrained boards needing a 60-ball FBGA 256 Mbit DDR device with byte-oriented DQS and data masking.

Unique Advantages

• AEC-Q100 qualification: Provides documented qualification for designs that require automotive-grade components.
• DDR source-synchronous capture: DQS per byte and DLL alignment simplify timing closure for high-speed reads and writes.
• Compact FBGA footprint: 60-ball (8 mm × 12.5 mm) package reduces board area for space-constrained applications.
• Flexible timing and burst control: Programmable burst lengths (2/4/8) and auto precharge support adapt to varied memory access patterns.
• Wide operating voltage range: 2.3 V–2.7 V supply supports standard 2.5 V DDR I/O requirements while matching device timing specifications.
• Production readiness: Automotive-focused documentation items such as PPAP submission and 8D response are available as noted in product documentation.

Why Choose MT46V16M16CY-5B AIT:M TR?

This MT46V16M16CY-5B AIT:M TR device combines a compact 60-ball FBGA package with a 256 Mbit DDR SDRAM architecture designed for synchronous, source-synchronous data capture and predictable timing. Its organization (16M × 16), four internal banks, and DDR features such as DLL alignment, programmable burst lengths and dual-byte DQS support make it suitable for embedded systems requiring compact automotive-grade memory.

With AEC-Q100 qualification, an extended operating temperature range (–40 °C to +85 °C), and automotive-oriented documentation, this device targets engineering teams designing robust, qualified systems that need verified DDR performance in a small solder-down package.

Request a quote or contact sales to obtain pricing, lead times and availability for the MT46V16M16CY-5B AIT:M TR.