MT46V16M16BG-6:F TR

The MT46V16M16BG-6:F TR is a 256 Mbit parallel DDR SDRAM organized as 16M × 16 with a 60-ball FBGA (8 × 14) package. It implements internal pipelined double-data-rate architecture with bidirectional DQS and a DLL to support source-synchronous data capture.

Designed for applications requiring compact, board-mounted volatile memory, this device offers DDR operation at up to a 167 MHz clock rate (CL = 2.5 speed grade), low-voltage operation, and standard DDR command and refresh features for system memory subsystems.

Key Features

• Core Memory Architecture  Internal pipelined DDR architecture providing two data accesses per clock cycle and four internal banks for concurrent operation.
• Density & Organization  256 Mbit total capacity organized as 16M × 16 with support for programmable burst lengths (BL = 2, 4, or 8).
• Performance & Timing  Clock frequency up to 167 MHz for the -6 speed grade (CL = 2.5); typical access window and data-out windows consistent with DDR timing. Specified access time is 700 ps and a write cycle time (word page) of 15 ns.
• Signal & Interface  Parallel memory interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) transmitted/received with data, and data mask (DM) support (x16 has two DQS and two DM—one per byte).
• Voltage & Power  Operates with VDD/VDDQ nominally at 2.5 V (documented ranges: 2.3 V–2.7 V and specific VDD/VDDQ tolerances noted in the datasheet).
• Refresh & Self-Management  Supports auto refresh (8192-cycle refresh) and self-refresh options per device revision notes; concurrent auto precharge is supported.
• Package & Temperature  60-ball FBGA package (8 mm × 14 mm). Commercial operating temperature range: 0°C to +70°C (TA).

Typical Applications

• Embedded system memory  Use as on-board parallel DDR SDRAM where 256 Mbit volatile storage and standard DDR timing are required.
• Consumer electronics subsystems  Suitable for compact board-level memory implementations that need low-voltage DDR operation in a 60-ball FBGA footprint.
• Battery-powered and low-voltage designs  Applicable where 2.3 V–2.7 V supply operation and DDR data-strobe signaling simplify interface design.

Unique Advantages

• Double-data-rate throughput: Internal DDR pipelined architecture and DQS-based source-synchronous capture enable two data transfers per clock cycle for improved effective bandwidth.
• Byte-level strobe and masking: Dual DQS and DM on the x16 organization provide per-byte data strobe and write-mask control for finer-grained write operations.
• Flexible timing options: Programmable burst lengths (2/4/8) and documented speed-grade timing (including CL = 2.5 at 167 MHz for the -6 grade) allow tuning for system timing and throughput.
• Standard DDR signaling: Differential clock inputs (CK/CK#) and SSTL_2-compatible 2.5 V I/O behavior support conventional DDR memory controller interfaces.
• Compact FBGA package: 60-ball FBGA (8 × 14 mm) enables high-density board placement while preserving DDR signal routing considerations.

Why Choose IC DRAM 256MBIT PAR 60FBGA?

The MT46V16M16BG-6:F TR positions itself as a compact, low-voltage DDR SDRAM option for designers needing 256 Mbit of parallel volatile memory in a 60-ball FBGA package. Its DDR architecture, bidirectional DQS, and dual-byte handling on x16 devices deliver measured timing flexibility and interface control suited for embedded and board-level memory subsystems.

This device is appropriate for commercial temperature applications and systems that require standard DDR command/refresh behavior, programmable burst lengths, and common supply ranges. It provides a predictable, spec-driven memory solution for projects prioritizing compact footprint and established DDR signaling.

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