MT46V16M16BG-6:F

The MT46V16M16BG-6:F is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 60-ball FBGA package. It implements a double-data-rate, pipelined architecture with source-synchronous data capture to deliver two data transfers per clock cycle.

This device is suited for board-level memory requirements where a compact 60-FBGA footprint, 167 MHz clock operation, and standard commercial temperature range are required. Key value comes from its DDR performance features, low-voltage operation, and flexible burst and refresh options.

Key Features

• Core / Architecture Internal pipelined DDR architecture enabling two data accesses per clock cycle; four internal banks for concurrent operation.
• Memory Organization 256 Mbit capacity organized as 16M × 16 with a parallel DRAM interface and 4 internal banks.
• Data I/O and Capture Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 implementation provides two DQS signals (one per byte). Data mask (DM) available for write masking.
• Timing and Performance Rated for 167 MHz clock operation with a 6 ns cycle time (-6 timing), and an access window specification that supports DDR operation; access time listed as 700 ps.
• Power Operates from a 2.3 V to 2.7 V supply range suitable for standard 2.5 V DDR systems.
• Refresh and Burst Control Supports programmable burst lengths (2, 4, 8), auto refresh and self refresh options, and an 8K refresh cycle count per the datasheet.
• Clocking and DLL Differential clock inputs (CK, CK#) with a DLL to align DQ and DQS transitions with CK for reliable timing alignment.
• Package and Temperature 60-ball FBGA (8 × 14 mm footprint) package; commercial operating temperature range 0°C to 70°C.

Typical Applications

• Board-level memory expansion — Provides 256 Mbit parallel DDR SDRAM capacity where a compact FBGA package is required for space-constrained PCB designs.
• Embedded systems — Suitable for designs that require source-synchronous DDR operation with programmable burst lengths and standard commercial temperature operation.
• Compact modules and daughtercards — 60-ball FBGA (8×14 mm) enables integration into small form-factor memory modules and daughtercards using a 2.3–2.7 V supply.

Unique Advantages

• Double-data-rate throughput: Delivers two data transfers per clock cycle via DDR architecture for improved effective bandwidth at a 167 MHz clock rate.
• Byte-level strobes and masking: x16 device provides two DQS signals and data mask lines for per-byte capture and write masking, simplifying high-speed data capture and write control.
• Flexible timing and bursts: Programmable burst lengths (2, 4, 8) and auto/self-refresh support provide design flexibility for various memory access patterns.
• Low-voltage operation: Operates across a 2.3 V–2.7 V supply range compatible with standard 2.5 V DDR I/O signaling.
• Compact FBGA footprint: 60-ball FBGA (8 × 14 mm) package enables high-density placement on space-constrained boards.
• Commercial temperature rating: Rated for 0°C to 70°C operation for general-purpose electronics applications.

Why Choose MT46V16M16BG-6:F?

The MT46V16M16BG-6:F positions itself as a compact, parallel DDR SDRAM option delivering DDR throughput, per-byte data strobe capability, and flexible refresh/burst control in a 60-ball FBGA package. Its 16M × 16 organization, 167 MHz clock rating, and 2.3–2.7 V supply make it suitable for designs that require standard commercial-temperature DDR memory with a small PCB footprint.

This device is appropriate for engineers and procurement teams specifying board-level DDR memory where predictable timing (access time 700 ps), source-synchronous data capture, and package density are primary considerations.

Request a quote or submit a pricing inquiry for MT46V16M16BG-6:F to review availability and delivery for your design requirements.