MT46V16M16BG-6 IT:F TR

The MT46V16M16BG-6 IT:F TR is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 60-ball FBGA package. It uses a DDR architecture with internal DLL and source-synchronous data strobes to deliver two data transfers per clock cycle.

Designed for applications requiring compact, industrial-temperature memory, this device provides programmable burst lengths, internal banking, and a 2.3 V–2.7 V supply range for integration into embedded and board-level systems.

Key Features

• Core Architecture  Internal, pipelined double-data-rate (DDR) architecture enabling two data accesses per clock cycle; includes an internal DLL to align DQ/DQS with CK.
• Memory Organization  256 Mbit capacity arranged as 16M × 16 with four internal banks for concurrent operation and a parallel memory interface.
• Data Strobes & Timing  Bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS signals (one per byte). Programmable burst lengths of 2, 4, or 8.
• Performance Parameters  Specified clock frequency up to 167 MHz with an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Voltage & I/O  Supply voltage range 2.3 V–2.7 V; datasheet nominal VDD/VDDQ noted at +2.5 V ±0.2 V. 2.5 V I/O signaling (SSTL_2-compatible) is specified in the datasheet.
• Refresh & Reliability  Auto refresh supported with 8K refresh cycles (64 ms for commercial & industrial ratings); self-refresh options noted in the datasheet.
• Package & Temperature  60-ball FBGA (8 mm × 14 mm) package; industrial temperature rating of −40°C to +85°C (TA) for robust operation across a wide ambient range.
• Clock & Control  Differential clock inputs (CK, CK#) with commands entered on positive CK edges; DQS edge-aligned for READs and center-aligned for WRITEs as specified.

Typical Applications

• Industrial Embedded Systems  DDR memory for controllers and processors operating in industrial temperature ranges (−40°C to +85°C).
• Board-Level Memory Expansion  Compact 60-ball FBGA package suited for PCBs requiring 256 Mbit parallel DDR memory in space-constrained designs.
• High-Speed Data Buffers  Use where source-synchronous DQS and DDR transfers (two accesses per clock) are needed for bursty data throughput.

Unique Advantages

• DDR Performance in a Small Footprint:  Double-data-rate architecture with DQS and DLL support delivers high data throughput while using a compact 60-FBGA package.
• Industrial Temperature Capability:  Rated for −40°C to +85°C (TA), enabling deployment in environments with extended temperature requirements.
• Flexible Timing and Burst Options:  Programmable burst lengths (2, 4, 8) and defined timing parameters support adaptable memory transfer patterns.
• Robust Refresh and Bank Architecture:  Four internal banks and standard auto-refresh (8K cycles) provide stable operation for sustained memory retention and concurrency.
• Standard Voltage Range:  2.3 V–2.7 V supply window with nominal 2.5 V operation supports common SSTL_2-compatible I/O implementations.
• Parallel Interface Compatibility:  Parallel memory interface simplifies integration with controllers designed for x16 DDR SDRAM devices.

Why Choose IC DRAM 256MBIT PAR 60FBGA?

The MT46V16M16BG-6 IT:F TR positions itself as a compact, industrial-temperature DDR SDRAM option offering 256 Mbit capacity in a 16M × 16 organization. Its DDR architecture with source-synchronous DQS, internal DLL, and programmable burst lengths supports designs that require deterministic timing and efficient burst transfers.

This device is suited to board-level memory expansion and embedded designs that need a balance of density, performance, and industrial temperature operation. The combination of a 60-ball FBGA package, defined timing characteristics, and standard supply voltage simplifies integration into systems where board space and environmental range are primary considerations.

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