MT46V16M16CY-5B XIT:M

IC DRAM 256MBIT PARALLEL 60FBGA
Part Description

IC DRAM 256MBIT PARALLEL 60FBGA

Quantity 814 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeIndustrial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT46V16M16CY-5B XIT:M – IC DRAM 256Mbit Parallel 60FBGA

The MT46V16M16CY-5B XIT:M is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It delivers DDR operation at a 200 MHz clock frequency and is provided in a 60-ball FBGA package for compact board-level integration.

Designed for systems requiring volatile, high-frequency DRAM in a small footprint, the device is suitable for applications that require a 2.5 V–2.7 V supply and an extended operating temperature range of −40°C to 85°C.

Key Features

  • Memory Core 256 Mbit DRAM organized as 16M × 16, delivered as DDR SDRAM for dual-data-rate operation at a 200 MHz clock.
  • Performance 200 MHz clock frequency with a specified access time of 700 ps and a write cycle time (word page) of 15 ns for timing-sensitive designs.
  • Interface Parallel memory interface compatible with parallel DDR system architectures.
  • Power Operating supply voltage range of 2.5 V to 2.7 V.
  • Package Compact 60-ball FBGA package (60-TFBGA / 60-FBGA, 8×12.5) for space-constrained PCB designs.
  • Operating Range Specified operating temperature range from −40°C to 85°C (TA).

Typical Applications

  • Embedded Systems Provides 256 Mbit of DDR SDRAM for system memory in embedded processors and controllers requiring parallel DDR memory.
  • Networking and Communications Equipment Suitable for buffering and temporary data storage where a parallel DDR memory interface and 200 MHz operation are required.
  • Industrial Control The −40°C to 85°C operating range supports use in industrial control electronics that need reliable volatile memory across extended temperatures.

Unique Advantages

  • Compact FBGA Package: 60-ball FBGA (8×12.5) package enables dense board-level integration without sacrificing memory capacity.
  • DDR Operation at 200 MHz: Dual-data-rate operation at a 200 MHz clock provides timing suitable for designs targeting this performance envelope.
  • Balanced Memory Organization: 16M × 16 organization offers a straightforward data-width arrangement for parallel memory interfaces.
  • Extended Temperature Range: Rated for −40°C to 85°C (TA), supporting deployment in temperature-variable environments.
  • Standard DDR Power Domain: 2.5 V–2.7 V supply simplifies integration with systems using this DDR power range.
  • Defined Timing Characteristics: Published access time (700 ps) and write cycle time (15 ns) assist in predictable system timing design.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT46V16M16CY-5B XIT:M positions itself as a compact, standards-based DDR SDRAM device delivering 256 Mbit capacity with a 16M × 16 organization and 200 MHz DDR operation. Its combination of defined timing (700 ps access, 15 ns write cycle), a 2.5 V–2.7 V power range, and a 60-ball FBGA package makes it well suited for engineers specifying parallel DDR memory in space-constrained or temperature-challenged designs.

Backed by Micron Technology Inc., this device addresses applications that need verifiable DDR performance, predictable timing, and a small form factor, offering a clear specification set for system integration and procurement.

Request a quote or submit an inquiry to obtain pricing and availability for the MT46V16M16CY-5B XIT:M.

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